High-throughput Synthesis of Solution-Processable van der Waals Heterostructures through Electrochemistry

被引:5
|
作者
Shi, Huanhuan [1 ,2 ]
Li, Mengmeng [5 ,6 ]
Fu, Shuai [7 ]
Neumann, Christof [8 ,9 ]
Li, Xiaodong [1 ,2 ,3 ]
Niu, Wenhui [1 ,2 ,3 ]
Lee, Yunji [7 ]
Bonn, Mischa [7 ]
Wang, Hai I. I. [7 ]
Turchanin, Andrey [8 ,9 ]
Nia, Ali Shaygan [1 ,2 ,3 ]
Yang, Sheng [4 ]
Feng, Xinliang [1 ,2 ,3 ]
机构
[1] Tech Univ Dresden, Ctr Adv Elect Dresden cfaed, Mommsenstr 4, D-01062 Dresden, Germany
[2] Tech Univ Dresden, Dept Chem & Food Chem, Mommsenstr 4, D-01062 Dresden, Germany
[3] Max Planck Inst Microstruct Phys, Weinberg 2, D-06120 Halle, Germany
[4] Shanghai Jiao Tong Univ, Frontiers Sci Ctr Transformat Mol, Sch Chem & Chem Engn, Shanghai 200240, Peoples R China
[5] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[6] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[7] Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany
[8] Friedrich Schiller Univ Jena, Inst Phys Chem, Lessingstr 10, D-07743 Jena, Germany
[9] Friedrich Schiller Univ Jena, Ctr Energy & Environm Chem Jena CEEC Jena, Lessingstr 10, D-07743 Jena, Germany
基金
中国国家自然科学基金;
关键词
2D Semiconductors; Electrochemical Synthesis; NIR Photodetectors; Solution Processability; Van Der Waals Heterostructures; PHOTOCURRENT GENERATION; EPITAXIAL-GROWTH; GRAPHENE; EXFOLIATION; NANOSHEETS; INPLANE; POLYMER; PLANAR; ORDER;
D O I
10.1002/anie.202303929
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional van der Waals heterostructures (2D vdWHs) have recently gained widespread attention because of their abundant and exotic properties, which open up many new possibilities for next-generation nanoelectronics. However, practical applications remain challenging due to the lack of high-throughput techniques for fabricating high-quality vdWHs. Here, we demonstrate a general electrochemical strategy to prepare solution-processable high-quality vdWHs, in which electrostatic forces drive the stacking of electrochemically exfoliated individual assemblies with intact structures and clean interfaces into vdWHs with strong interlayer interactions. Thanks to the excellent combination of strong light absorption, interfacial charge transfer, and decent charge transport properties in individual layers, thin-film photodetectors based on graphene/In2Se3 vdWHs exhibit great promise for near-infrared (NIR) photodetection, owing to a high responsivity (267 mA W-1), fast rise (72 ms) and decay (426 ms) times under NIR illumination. This approach enables various hybrid systems, including graphene/In2Se3, graphene/MoS2 and graphene/MoSe2 vdWHs, providing a broad avenue for exploring emerging electronic, photonic, and exotic quantum phenomena.
引用
收藏
页数:8
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