Ferroelectric Resistance Switching in Epitaxial BiFeO3/La0.7Sr0.3MnO3 Heterostructures

被引：2
作者：
Qi, Hongyan [1 ]
Wu, Weixin [1 ]
Chen, Xinqi [1 ]
Lee, Hee Chul
机构：
[1] Hubei Univ Educ, Sch Phys & Mech & Elect Engn, Expert Workstn Terahertz Technol & Adv Energy Mat, Wuhan 430205, Peoples R China
来源：
MATERIALS | 2023年 / 16卷 / 22期
基金：
中国国家自然科学基金;
关键词：
resistance switching; interface; ferroelectric polarization; Schottky barrier; THIN-FILMS; PHYSICS;
D O I：
10.3390/ma16227198
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
BiFeO3/La0.7Sr0.3MnO3 (BFO/LSMO) epitaxial heterostructures were successfully synthesized by pulsed laser deposition on (001)-oriented SrTiO3 single-crystal substrates with Au top electrodes. Stable bipolar resistive switching characteristics regulated by ferroelectric polarization reversal was observed in the Au/BFO/LSMO heterostructures. The conduction mechanism was revealed to follow the Schottky emission model, and the Schottky barriers in high-resistance and low-resistance states were estimated based on temperature-dependent current-voltage curves. Further, the observed memristive behavior was interpreted via the modulation effect on the depletion region width and the Schottky barrier height caused by ferroelectric polarization reversal, combining with the oxygen vacancies migration near the BFO/LSMO interface.
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页数：9
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