Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

被引：3
作者：
Han, Changfeng [1 ,2 ,3 ]
Qian, Ruoxi [2 ,4 ]
Xiang, Chaoyu [1 ,2 ,3 ]
Qian, Lei [5 ]
机构：
[1] Qianwan Inst CNITECH, Lab Adv Nanooptoelectron Mat & Devices, Ningbo 315300, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Div Funct Mat & Nanodevices, Ningbo 315201, Peoples R China
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Engn Res Ctr Energy Optoelect Mat &, Ningbo 315201, Peoples R China
[4] Jiangsu JITRI Mol Engn Inst Co Ltd, Changshu 215500, Peoples R China
[5] Shenzhen Res Inst, Beijing Inst Technol, Shenzhen 518057, Peoples R China
来源：
CHINESE PHYSICS B | 2023年 / 32卷 / 12期
关键词：
quantum dots; light emitting diodes; device engineering; 85.35.-p; 61.46.Df; HIGH-EFFICIENCY; CORE/SHELL NANOCRYSTALS; BRIGHT; CDSE; LUMINESCENCE; ENERGY; LIGAND; OXIDE; SIZE; ELECTROLUMINESCENCE;
D O I：
10.1088/1674-1056/acb916
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Quantum dots (QDs) have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency, narrow half-peak width, and continuously adjustable emitting wavelength. QDs light emitting diodes (QLEDs) are expected to become the next generation commercial display technology. This paper reviews the progress of QLED from physical mechanism, materials, to device engineering. The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.
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收藏
页数：13
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