Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001) (vol 122, 243503, 2023)

被引：0
|
作者：
Tetzner, H. [1 ]
Seifert, W. [1 ]
Skibitzki, O. [1 ]
Yamamoto, Y. [1 ]
Lisker, M. [1 ]
Mirza, M. M. [2 ]
Fischer, I. A. [3 ]
Paul, D. J. [2 ]
Seta, Monica De [4 ]
Capellini, G. [1 ,4 ]
机构：
[1] IHP Leibniz Inst Innovat Mikroelektron, Technol Pk 25, Frankfurt, Germany
[2] Univ Glasgow, James Watt Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland
[3] BTU Cottbus Senftenberg, Expt Phys & Funkt Mat, Erich Weinert Str 1, D-03046 Cottbus, Germany
[4] Univ Roma Tre, Dipartimento Sci, Viale G Marconi 446, I-00146 Rome, Italy
来源：
APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 06期
关键词：
D O I：
10.1063/5.0169378
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页数：1
相关论文
共 42 条
  • [31] Domain size effects on thermoelectric properties of p-type Ge0.95Sn0.05 layers grown on GaAs and Si substrates
    Imai, Yukihiro
    Takahashi, Kouta
    Uchida, Noriyuki
    Maeda, Tatsuro
    Nakatsuka, Osamu
    Zaima, Shigeaki
    Kurosawa, Masashi
    2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018), 2018, : 310 - 312
  • [32] Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD
    Kil, Yeon-Ho
    Yang, Hyeon Deok
    Yang, Jong-Han
    Kang, Sukill
    Jeong, Tae Soo
    Choi, Chel-Jong
    Kim, Taek Sung
    Shim, Kyu-Hwan
    Kim, Dae-Jung
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 64 (03) : 443 - 450
  • [33] Transport properties of Mg2X0.4Sn0.6 solid solutions (X = Si, Ge) with p-type conductivity
    Fedorov, M. I.
    Zaitsev, V. K.
    Eremin, I. S.
    Gurieva, E. A.
    Burkov, A. T.
    Konstantinov, P. P.
    Vedernikov, M. V.
    Samunin, A. Yu.
    Isachenko, G. N.
    Shabaldin, A. A.
    PHYSICS OF THE SOLID STATE, 2006, 48 (08) : 1486 - 1490
  • [34] Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors
    Lee, ML
    Fitzgerald, EA
    APPLIED PHYSICS LETTERS, 2003, 83 (20) : 4202 - 4204
  • [35] PHONON THERMAL-CONDUCTIVITY OF HEAVILY DOPED HOT-PRESSED P-TYPE SI-GE ALLOYS AT HIGH-TEMPERATURES
    GAUR, NKS
    PHYSICA B & C, 1978, 93 (02): : 212 - 218
  • [36] Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si1-xGex/Si virtual substrates
    Lee, ML
    Leitz, CW
    Cheng, Z
    Pitera, AJ
    Langdo, T
    Currie, MT
    Taraschi, G
    Fitzgerald, EA
    Antoniadis, DA
    APPLIED PHYSICS LETTERS, 2001, 79 (20) : 3344 - 3346
  • [37] High-frequency transport in p-type Si/Si0.87Ge0.13 heterostructures studied with surface acoustic waves in the quantum Hall regime -: art. no. 045333
    Drichko, IL
    Diakonov, AM
    Smirnov, IY
    Andrianov, GO
    Mironov, OA
    Myronov, M
    Leadley, DR
    Whall, TE
    PHYSICAL REVIEW B, 2005, 71 (04):
  • [38] Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate
    Ryu, Mee-Yi
    Yeo, Y. K.
    Ahoujja, M.
    Harris, Tom
    Beeler, Richard
    Kouvetakis, John
    APPLIED PHYSICS LETTERS, 2012, 101 (13)
  • [39] HIGH-TEMPERATURE OPERATION OF STRAINED SI0.65GE0.35/SI(111) P-TYPE MULTIPLE-QUANTUM-WELL LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY
    FUKATSU, S
    USAMI, N
    SHIRAKI, Y
    NISHIDA, A
    NAKAGAWA, K
    APPLIED PHYSICS LETTERS, 1993, 63 (07) : 967 - 969
  • [40] The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si0.88Ge0.12 channel grown on bulk Si and a PD-SOI substrate
    Choi, Sangi-Sik
    Choi, A-Ram
    Kim, Jae-Yon
    Yang, Jeon-Wook
    Han, Tae-Hyun
    Cho, Deok-Ho
    Mheen, Bongi
    Shim, Kyu-Hwan
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (02)
12345