Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001) (vol 122, 243503, 2023)

被引：0
|
作者：
Tetzner, H. [1 ]
Seifert, W. [1 ]
Skibitzki, O. [1 ]
Yamamoto, Y. [1 ]
Lisker, M. [1 ]
Mirza, M. M. [2 ]
Fischer, I. A. [3 ]
Paul, D. J. [2 ]
Seta, Monica De [4 ]
Capellini, G. [1 ,4 ]
机构：
[1] IHP Leibniz Inst Innovat Mikroelektron, Technol Pk 25, Frankfurt, Germany
[2] Univ Glasgow, James Watt Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland
[3] BTU Cottbus Senftenberg, Expt Phys & Funkt Mat, Erich Weinert Str 1, D-03046 Cottbus, Germany
[4] Univ Roma Tre, Dipartimento Sci, Viale G Marconi 446, I-00146 Rome, Italy
来源：
APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 06期
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D O I：
10.1063/5.0169378
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：1
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