Enhancement of the linear electro-optic effect by high pressure

被引：1

作者：

Gao, Yuewen ^{[1
]}

Gu, Yu ^{[1
]}

Iitaka, Toshiaki ^{[2
]}

Li, Zhi ^{[1
]}

机构：

[1] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Peoples R China

[2] RIKEN, Discrete Event Simulat Res Team, Ctr Computat Sci, 2-1 Hirosawa, Wako, Saitama 3510198, Japan

来源：

PHYSICAL REVIEW B | 2023年 / 107卷 / 24期

关键词：

OPTICAL-RESPONSE; SILICON; PHOTONICS; MGSIN2; LINBO3;

D O I：

10.1103/PhysRevB.107.245203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is challenging to design electro-optic (EO) crystals with both a large bandgap and a high EO coefficient. We propose that some semiconductors synthesized under a high pressure environment can present both a large bandgap and a high linear EO coefficient because of the enhanced strength of the valence bond. The electronic band structures and linear EO coefficients of the IISiN2 (II = Mg, Sr, Ba) compounds are studied using first-principles calculation. Our calculated results predict that both SrSiN2 and BaSiN2, under a high-pressure condition, will crystalize into an orthorhombic structure with the same space group of MgSiN2 under ambient pressure. The calculated bandgaps are 5.48, 4.41, and 3.57 eV, respectively, for MgSiN2, SrSiN2, and BaSiN2, while the calculated linear EO coefficients are 1.55, 12.09, and 21.60 pm/V at a fiber communication wavelength of 1550 nm. The increasing linear EO coefficients can be interpreted by the enhanced bond strength and a reduced bandgap. This work indicates that it is feasible to enhance the linear EO coefficient with high pressure.

引用

页数：8

共 62 条

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