Artificial Nociceptor Based on Short-Term Memory TFT with Controllable Sensitization Level

被引：0
|
作者：
Chen, Ruiqi
Li, Ruiyi
Yang, Haozhang
Yu, Guihai
Zhang, Yizhou
Chen, Yiyang
Wu, Lianliang
Dong, Junchen [2 ]
Han, Dedong
Zhou, Zheng
Huang, Peng [1 ]
Liu, Xiaoyan
Kang, Jinfeng
机构：
[1] Peking Univ, Sch Integrated Circuits, Beijing, Peoples R China
[2] Beijing Informat Sci & Technol Univ, Beijing, Peoples R China
来源：
2023 SILICON NANOELECTRONICS WORKSHOP, SNW | 2023年
基金：
中国国家自然科学基金;
关键词：
D O I：
10.23919/SNW57900.2023.10183940
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
In this work, we proposed and fabricated a novel artificial nociceptor based on short-term memory (STM) TFT with fully BEOL-compatible process. The proposed device well emulates four essential characteristics of nociceptors and exhibits adjustable sensitization level controlled by gate voltage. We further demonstrated a pain perception system composed of the nociceptor and a leaky integrate-and-fire (LIF) neuron.
引用
收藏
页码：21 / 22
页数：2
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