Over 200 cm2 V-1 s-1 of electron inversion channel mobility for AlSiO/GaN MOSFET with nitrided interface

被引:14
作者
Ito, Kenji [1 ]
Iwasaki, Shiro [1 ]
Tomita, Kazuyoshi [2 ]
Kano, Emi [2 ]
Ikarashi, Nobuyuki [2 ]
Kataoka, Keita [1 ]
Kikuta, Daigo [1 ]
Narita, Tetsuo [1 ]
机构
[1] Toyota Cent Res & Dev Labs Inc, Nagakute 4801192, Japan
[2] Nagoya Univ, Inst Mat & Syst Sustainabil IMaSS, Nagoya 4648601, Japan
关键词
interfacial layer; AlSiO; GaN; MOSFET; mobility; AlN; BORDER TRAPS; GAN MOSFETS;
D O I
10.35848/1882-0786/ace33c
中图分类号
O59 [应用物理学];
学科分类号
摘要
By controlling a metal-oxide-semiconductor interface of an AlSiO/GaN system, the electron inversion channel mobility was significantly improved to 229 cm(2) V-1 s(-1) in a field-effect transistor. A 3 nm thick AlN interlayer formed by atomic layer deposition effectively suppressed the oxidation of the GaN surface and reduced the border traps, resulting in high channel mobility. An additional nitrogen radical treatment before AlN deposition further improved the subthreshold slope and the channel mobility, which was consistent with the lower charged defects extracted from the mobility analysis in the low effective normal field region.
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页数:4
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