2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate

被引：55

作者：

Roy, Saurav ^{[1
]}

Bhattacharyya, Arkka ^{[1
]}

Peterson, Carl ^{[1
]}

Krishnamoorthy, Sriram ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 122卷 / 15期

关键词：

BALIGAS FIGURE; GUARD RING; TERMINATION; MOSFETS; DESIGN; MERIT;

D O I：

10.1063/5.0137935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a vertical beta-Ga2O3 Schottky barrier diode (SBD) with BaTiO3 as field plate oxide on a low doped thick epitaxial layer exhibiting 2.1 kV breakdown voltage. A thick drift layer of 11 mu m with a low effective doping concentration of 8 x 10(15) cm(-3) is used to achieve high breakdown voltage. Using the high-k dielectric with a dielectric constant of 248, the breakdown voltage increases from 816 V for the non-field-plated SBD to 2152 V (>2x improvement) for the field-plated SBD without compromising the on-state performance. The diode dimensions are varied to analyze the effect of edge high-field related leakage with reverse bias and also the effect of current spreading during forward operation. Very uniform distribution of breakdown voltages of 2152 +/- 20 V are observed for the diode diameters from 50 to 300 mu m for the field-plated SBDs. The on and off state power losses are also analyzed and compared with the non-field-plated devices and the switching losses are estimated analytically.

引用

页数：5

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