Fabrication of self-standing large (111) single crystal diamond using bulk growth of (100) CVD diamond and lift-off process

被引:3
作者
Shimaoka, Takehiro [1 ]
Yamada, Hideaki [1 ]
Chayahara, Akiyoshi [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Diamond Wafer Team, 1-8-31 Midoriga Oka, Ikeda, Osaka 5638577, Japan
关键词
MWPCVD; Ion implantation; Wafer; Doping; Growth; QUALITY; PLATES; WAFERS; THICK;
D O I
10.1016/j.diamond.2023.110781
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond (111) plane is superior in impurity doping and quantum spin control to (100) plane, however, there are many technical issues in mass production of the substrate, such as a smaller seed substrate size, low removal rate of polishing, and low growth rate. In this study, a large (111) single crystal diamond substrate of 7 mm x 6 mm was fabricated by growing and processing bulk (100) CVD single crystal. Furthermore, using this as a seed substrate, a (111) self-standing plate was fabricated using the lift-off method. The FWHM of the X-ray rocking curve was 46 arcsec and that of the Raman peak was 2 cm-1. This method can be applied to fabrication of any high index plane such as (113) and can be utilized to fabrication of substrate for electronic and quantum devices, device processing to fabricate vertical structure.
引用
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页数:6
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