Laser Diodes (850 nm) Based on an Asymmetric AlGaAs/GaAs Heterostructure with a Bulk Active Region for Generating High-Power Subnanosecond Optical Pulses

被引：0

作者：

Podoskin, A. A. ^{[1
]}

Shushkanov, I. V. ^{[1
]}

Shamakhov, V. V. ^{[1
]}

Rizaev, A. E. ^{[1
]}

Kondratov, M. I. ^{[1
]}

Klimov, A. A. ^{[1
]}

Zazulin, S. V. ^{[2
]}

Slipchenko, S. O. ^{[1
]}

Pikhtin, N. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[2] AO PK FID Tekhn, St Petersburg 194223, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2023年 / 50卷 / SUPPL 5期

基金：

俄罗斯科学基金会;

关键词：

pulsed diode laser; laser heterostructure; SATURATION; THYRISTOR;

D O I：

10.3103/S1068335623170104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Laser diodes based on an asymmetric heterostructure AlGaAs/GaAs with a bulk active region, optimized for generating high-power subnanosecond optical pulses in the gain-switching mode, have been developed and investigated. The optimization of the asymmetric heterostructure design made it possible to obtain the parameter d/G = 4.2 mu m (at the thickness d = 45 nm of the GaAs bulk active region and the optical confinement factor G = 1.08%). The developed laser diodes with a wide emitting aperture (100 mu m) in the gain-switching mode demonstrated a peak output optical power of 22 W at a single pulse width at half maximum of less than 110 ps.

引用

页码：S513 / S519

页数：7

共 25 条

[21] Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor with narrow mesa stripe contact
Slipchenko, Sergey O.
Podoskin, Aleksandr A.
Soboleva, Olga S.
Pikhtin, Nikita A.
Bagaev, Timur A.
Ladugin, Maxim A.
Marmalyuk, Aleksandr A.
Simakov, Vladimir A.
Tarasov, IL'Ya S.
[J]. OPTICS EXPRESS, 2016, 24 (15): : 16500 - 16511
[22] The Effect of the Carrier Drift Velocity Saturation in High-Power Semiconductor Lasers at Ultrahigh Drive Currents
Soboleva, Olga S.
Zolotarev, Vasily V.
Golovin, Vyacheslav S.
Slipchenko, Sergey O.
Pikhtin, Nikita A.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (11) : 4977 - 4982
[23] Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers
Wang, Xiaozhuo
Crump, Paul
Wenzel, Hans
Liero, Armin
Hoffmann, Thomas
Pietrzak, Agnieszka
Schultz, Christoph Matthias
Klehr, Andreas
Ginolas, Arnim
Einfeldt, Sven
Bugge, Frank
Erbert, Goetz
Traenkle, Guenther
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (05) : 658 - 665
[24] Wenzel H., 2012, P SPIE HIGH POWER DI, V8241, P232
[25] High peak power optical pulses generated with a monolithic master-oscillator power amplifier
Wenzel, Hans
Schwertfeger, Sven
Klehr, Andreas
Jedrzejczyk, Daniel
Hoffmann, Thomas
Erbert, Goetz
[J]. OPTICS LETTERS, 2012, 37 (11) : 1826 - 1828

← 1 2 3 →