Laser Diodes (850 nm) Based on an Asymmetric AlGaAs/GaAs Heterostructure with a Bulk Active Region for Generating High-Power Subnanosecond Optical Pulses

被引：0

作者：

Podoskin, A. A. ^{[1
]}

Shushkanov, I. V. ^{[1
]}

Shamakhov, V. V. ^{[1
]}

Rizaev, A. E. ^{[1
]}

Kondratov, M. I. ^{[1
]}

Klimov, A. A. ^{[1
]}

Zazulin, S. V. ^{[2
]}

Slipchenko, S. O. ^{[1
]}

Pikhtin, N. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[2] AO PK FID Tekhn, St Petersburg 194223, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2023年 / 50卷 / SUPPL 5期

基金：

俄罗斯科学基金会;

关键词：

pulsed diode laser; laser heterostructure; SATURATION; THYRISTOR;

D O I：

10.3103/S1068335623170104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Laser diodes based on an asymmetric heterostructure AlGaAs/GaAs with a bulk active region, optimized for generating high-power subnanosecond optical pulses in the gain-switching mode, have been developed and investigated. The optimization of the asymmetric heterostructure design made it possible to obtain the parameter d/G = 4.2 mu m (at the thickness d = 45 nm of the GaAs bulk active region and the optical confinement factor G = 1.08%). The developed laser diodes with a wide emitting aperture (100 mu m) in the gain-switching mode demonstrated a peak output optical power of 22 W at a single pulse width at half maximum of less than 110 ps.

引用

页码：S513 / S519

页数：7

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