Quaternary diborides-improving the oxidation resistance of TiB2±z coatings by disilicide alloying

被引：8

作者：

Bahr, Ahmed ^{[15
,1
]}

Beck, Oskar ^{[1
]}

Glechner, Thomas ^{[1
]}

Grimmer, Alexander ^{[1
]}

Wojcik, Tomasz ^{[1
]}

Kutrowatz, Philip ^{[1
]}

Ramm, Juergen ^{[2
]}

Hunold, Oliver ^{[2
]}

Kolozsvari, Szilard ^{[3
]}

Polcik, Peter ^{[3
]}

Ntemou, Eleni ^{[4
]}

Primetzhofer, Daniel ^{[4
]}

Riedl, Helmut ^{[1
,5
]}

机构：

[1] TU Wien, Christian Doppler Lab Surface Engn High Performan, Vienna, Austria

[2] Oerlikon Surface Solut AG, Oerlikon Balzers, Balzers, Liechtenstein

[3] Plansee Composite Mat GmbH, Lechbruck, Germany

[4] Uppsala Univ, Dept Phys & Astron, Uppsala, Sweden

[5] TU Wien, Inst Mat Sci & Technol, Vienna, Austria

来源：

MATERIALS RESEARCH LETTERS | 2023年 / 11卷 / 09期

基金：

瑞典研究理事会;

关键词：

Titanium diboride; sputtering; thin films; oxidation resistance; UHTC; Disilicides; MECHANICAL-PROPERTIES; ZRB2-MOSI2; COMPOSITE; DIFFUSION BARRIER; BEHAVIOR; STABILITY; CERAMICS; TITANIUM; KINETICS; ZRB2;

D O I：

10.1080/21663831.2023.2225554

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To overcome the limited oxidation resistance of the emerging class of transition metal borides, we suggest within this study novel quaternary diborides, Ti-TM-Si-B-2 +/- z (TM = Ta, Mo), achieving the compromise between excellent oxidation resistance and requirements of hard coatings. Single-phase AlB2-type structured Ti-TM-Si-B-2 +/- z films (3-5 mu m) are sputter-deposited from TiB2/TMSi2 targets. The Ti-Ta-Si-B-2 +/- z coatings exhibit 36 GPa in hardness, while maintaining strongly retarded oxidation kinetics till 1000 degrees C. Ti-Mo-Si-B-2 +/- z coatings preserve a hardness up to 27 GPa, although outperforming all their counterparts by featuring outstanding oxidation resistance with 440nm oxide scale thickness after 1 h at 1200 degrees C. [GRAPHICS] IMPACT STATEMENT First report on quaternary Ti-TM-Si-B-2 +/- z coatings stabilized in hexagonal AlB2-prototype structures. These hard coating materials exhibit unprecedented oxidation resistance up to 1200 degrees C due to the formation of Si-rich scales.

引用

页码：733 / 741

页数：9

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