One-step construction of buried a-Si/c-Si junction photocathodes for boosting photoelectrochemical hydrogen production

被引：9
|
作者：
Li, Sijie [1 ,2 ]
Lin, Huiwen [2 ,4 ]
Yang, Gaoliang [5 ]
Ren, Xiaohui [2 ]
Luo, Shunqin [2 ]
Ye, Jinhua [1 ,2 ,3 ]
机构：
[1] Hokkaido Univ, Grad Sch Chem Sci & Engn, Sapporo, Hokkaido 0600814, Japan
[2] Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[3] Tianjin Univ, Sch Mat Sci & Engn, TJU NIMS Int Collaborat Lab, Tianjin 300072, Peoples R China
[4] Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R China
[5] ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore
来源：
CHEMICAL ENGINEERING JOURNAL | 2023年 / 455卷
基金：
中国国家自然科学基金;
关键词：
Buried a-Si; c-Si junction; Surface; interface engineering; Planar Si photocathode; Photoelectrochemical hydrogen evolution; PLATINUM ELECTROLESS DEPOSITION; FLUORIDE SOLUTIONS; SILICON; SOLAR; PERFORMANCE; EVOLUTION; EFFICIENT; OXIDATION; DEVICE;
D O I：
10.1016/j.cej.2022.140898
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
The activity of Si-based photocathode for photoelectrochemical hydrogen production is mainly restricted by inadequate photovoltage and easy (photo)-corrosion, requiring complex doping or deposition techniques for improvement. Herein, a mild and feasible strategy is proposed to fabricate an amorphous Si/crystal Si (a-Si/c-Si) junction photocathode with co-deposited Pt cocatalyst. The a-Si layer acts as an electron transfer mediator to form an a-Si/c-Si buried junction with large energy band shift, thereby ensuring facile charge transfer. Meanwhile, the a-Si layer serves as a growth substrate to obtain controllable Pt nanoparticles. The Pt/a-Si/c-Si photocathode shows an onset potential of 0.42 V vs reversible hydrogen electrode (VRHE). A photocurrent up to - 35.0 mA cm-2 at 0 VRHE is obtained on Pt/a-Si/c-Si, which is much higher than that without a-Si layer. This study provides a practical manner for improving the photoresponse of planar Si-based photocathodes based on the construction of Si junction.
引用
收藏
页数：7
相关论文
共 50 条
  • [21] 1 keV hydrogen implantation in a-Si and c-Si: Physical vs computational modeling
    Universite du Quebec, Varennes, Canada
    Nucl Instrum Methods Phys Res Sect B, 1-4 (468-472):
  • [22] Role of hydrogen bonding environment in a-Si:H films for c-Si surface passivation
    Burrows, M. Z.
    Das, U. K.
    Opila, R. L.
    De Wolf, S.
    Birkmire, R. W.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (04): : 683 - 687
  • [23] 1 keV hydrogen implantation in a-Si and c-Si: Physical vs computational modeling
    Bourque, G
    Terreault, B
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 115 (1-4): : 468 - 472
  • [24] Study of a-Si:H/a-Si:H/μc-Si:H PIN type triple junction solar cells in a single chamber system
    Zheng, X. X.
    Zhang, X. D.
    Yang, S. S.
    Xu, S. Z.
    Wei, C. C.
    Sun, J.
    Geng, X. H.
    Zhao, Y.
    18TH INTERNATIONAL VACUUM CONGRESS (IVC-18), 2012, 32 : 308 - 313
  • [25] High efficiency a-Si:H/a-Si:H solar cell with a tunnel recombination junction and a n-type μc-Si:H layer
    Chang, Ping-Kuan
    Lu, Chun-Hsiung
    Yeh, Chih-Hung
    Houng, Mau-Phon
    THIN SOLID FILMS, 2012, 520 (09) : 3684 - 3687
  • [26] Surface photovoltage as a tool to monitor the effect of hydrogen treatment on a-Si:H/c-Si heterojunction
    Martini, L.
    Serenelli, L.
    Asquini, R.
    Caputo, D.
    de Cesare, G.
    Izzi, M.
    Tucci, M.
    THIN FILM SOLAR TECHNOLOGY V, 2013, 8823
  • [27] Parameter variation of the one-diode model of a-Si and a-Si/μc-Si solar cells for modeling light-induced degradation
    Weicht, J. A.
    Hamelmann, F. U.
    Behrens, G.
    INERA WORKSHOP: TRANSITION METAL OXIDE THIN FILMS-FUNCTIONAL LAYERS IN SMART WINDOWS AND WATER SPLITTING DEVICES. PARALLEL SESSION OF THE 18TH INTERNATIONAL SCHOOL ON CONDENSED MATTER PHYSICS, 2014, 559
  • [28] Hydrogen concentration at a-Si:H/c-Si heterointerfaces-The impact of deposition temperature on passivation performance
    Gotoh, Kazuhiro
    Wilde, Markus
    Kato, Shinya
    Ogura, Shohei
    Kurokawa, Yasuyoshi
    Fukutani, Katsuyuki
    Usami, Noritaka
    AIP ADVANCES, 2019, 9 (07):
  • [29] Hydrogen plasma and thermal annealing treatments on a-Si:H thin film for c-Si surface passivation
    Serenelli, Luca
    Chierchia, Rosa
    Izzi, Massimo
    Tucci, Mario
    Martini, Luca
    Caputo, Domenico
    Asquini, Rita
    de Cesare, Giampiero
    ADVANCED MATERIALS AND CHARACTERIZATION TECHNIQUES FOR SOLAR CELLS II, 2014, 60 : 102 - 108
  • [30] The effect of double doped nc-Si:H tunnel recombination junction in a-Si:H/c-Si tandem solar cells
    Lee, Sunhwa
    Park, Jinjoo
    Kim, Sangho
    Kim, Youngkuk
    Jeong, Chaehwan
    Yi, Junsin
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (07)
12345