An Inverse-Designed Nanophotonic Interface for Excitons in Atomically Thin Materials

被引:8
作者
Gelly, Ryan J. [1 ]
White, Alexander D. [2 ]
Scuri, Giovanni [1 ,2 ,3 ]
Liao, Xing [1 ,3 ]
Ahn, Geun Ho [2 ]
Deng, Bingchen [1 ,3 ]
Watanabe, Kenji [4 ]
Taniguchi, Takashi [4 ]
Vuckovic, Jelena [2 ]
Park, Hongkun [1 ,3 ]
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[3] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA
[4] Natl Inst Mat Sci, Res Ctr Funct Mat & Int Ctr Mat Nanoarchitecton, Tsukuba 3050044, Japan
基金
美国国家科学基金会;
关键词
2D materials; nanophotonics; inverse design; integrated photonics; optical cavity; DARK EXCITONS; MONOLAYER; EMITTERS;
D O I
10.1021/acs.nanolett.3c02931
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into photonic structures, but this integration is often limited by size and material quality. Here, we use hexagonal boron nitride (hBN), a benchmark choice for encapsulating atomically thin materials, as a waveguiding layer while simultaneously improving the optical quality of the embedded films. When combined with a photonic inverse design, it becomes a complete nanophotonic platform to interface with optically active 2D materials. Grating couplers and low-loss waveguides provide optical interfacing and routing, tunable cavities provide a large exciton-photon coupling to transition metal dichalcogenide (TMD) monolayers through Purcell enhancement, and metasurfaces enable the efficient detection of TMD dark excitons. This work paves the way for advanced 2D-material nanophotonic structures for classical and quantum nonlinear optics.
引用
收藏
页码:8779 / 8786
页数:8
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