Dielectric Properties and Microwave Absorbing Properties of Silicon Carbide Nanoparticles and Silicon Carbide Nanowhiskers

被引:0
作者
Foong, Phey Yee [1 ]
Voon, Chun Hong [1 ]
Lim, Bee Ying [2 ]
Teh, Pei Leng [2 ]
Rojan, Mohd Afendi Bin [3 ]
Gopinath, Subash C. B. [1 ,2 ]
Parmin, Nor Azizah [1 ]
Arshad, Mohd Khairuddin Md [1 ]
Lee, Yeng Seng [4 ]
Rahim, Ruslinda A. [1 ]
Hashim, Uda [1 ]
机构
[1] Univ Malaysia Perlis, Inst Nano Elect Engn, Kangar 01000, Perlis, Malaysia
[2] Univ Malaysia Perlis, Fac Chem Engn Technol, Arau 02600, Perlis, Malaysia
[3] Univ Malaysia Perlis, Fac Mech Engn & Technol, Arau 02600, Perlis, Malaysia
[4] Univ Malaysia Perlis, Fac Elect Engn & Technol, Padang Besar 02100, Perlis, Malaysia
来源
INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS | 2023年 / 16卷 / 02期
关键词
microwave absorption; dielectric; silicon carbide; nanoparticles; ELECTROMAGNETIC-WAVE ABSORPTION; GRAPHENE; NANOCRYSTALS; LIGHTWEIGHT; SHELL;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon carbide (SiC) is well known for their outstanding microwave absorbing properties. SiC nanomaterials (SiCNMs) are expected to have better microwave absorption performance due to their high specific surface area. To date, no study was reported to compare the dielectric properties and microwave absorbing properties of different type of SiCNMs. Therefore, the objective of this paper is to compare the dielectric properties and microwave absorption properties of different types of SiCNMs. In this paper, SiC nanoparticles (SiCNPs) and SiC nanowhiskers (SiCNWs) were characterised using SEM and XRD. In addition, their dielectric properties and microwave absorbing properties were measured using network analyser and transmission line theory. It was found that SiCNWs achieved higher dielectric constant and loss factor which are and r' pound =17.94 and r pound '' = 2.64 compared to SiCNPs that only achieved r' pound = 2.83 and r pound '' = 0.71. For microwave absorbing properties, SiCNWs and SiCNPs attained minimum reflection loss of -10.41 dB and -6.83 dB at 5.68 GHz and 17.68 GHz, respectively. The minimum reflection loss of SiCNPs and SiCNWs obtained in this study is much lower than the nanometer-SiC reported previously. These results suggested that SiCNWs can be an ideal candidate of microwave susceptors for various microwave applications.
引用
收藏
页码:451 / 460
页数:10
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