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High Energy Storage Performance of PZO/PTO Multilayers via Interface Engineering
被引:15
|作者:
Zhang, Yuanyuan
[1
,2
]
Chen, Qianqian
[1
]
Qi, Ruijuan
[1
]
Shen, Hao
[1
]
Sui, Fengrui
[1
]
Yang, Jing
[1
]
Bai, Wei
[1
]
Tang, Xiaodong
[1
]
Chen, Xuefeng
[3
]
Fu, Zhengqian
[3
]
Wang, Genshui
[3
]
Zhang, Shujun
[2
]
机构:
[1] East China Normal Univ, Sch Phys & Elect Sci, Dept Elect Sci, Key Lab Polar Mat & Devices,Minist Educ, Shanghai 200241, Peoples R China
[2] Univ Wollongong, Inst Superconducting & Elect Mat, Australian Inst Innovat Mat, Wollongong, NSW 2522, Australia
[3] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Peoples China, Shanghai 200050, Peoples R China
基金:
中国国家自然科学基金;
关键词:
multilayer;
energy storage;
antiferroelectric;
interface engineering;
PZO;
PTO;
THIN-FILMS;
DENSITY;
SUPERLATTICES;
DISLOCATIONS;
STABILITY;
PBZRO3;
CAPACITORS;
PBTIO3;
D O I:
10.1021/acsami.2c21202
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Antiferroelectric thin-film capacitors with ultralow remanent polarization and fast discharge speed have attracted extensive attention for energy storage applications. A multilayer heterostructure is considered to be an efficient approach to enhance the breakdown strength and improve the functionality. Here, we report a high-performance multilayer heterostructure (PbZrO3/PbTiO3)n with a maximum recoverable energy storage density of 36.4 J/cm3 due to its high electric breakdown strength (2.9 MV/cm) through the heterostructure strategy. The positive effect of interfacial blockage and the negative effect of local strain defects competitively affect the breakdown strength, showing an inflection point at n = 3. The atomic-scale characterizations reveal the underlying microstructure mechanism of the interplay between the heterointerface dislocations and the decreased energy storage performance. This work offers the potential of well-designed multilayers with high energy storage performance through heterostructure engineering.
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页码:7157 / 7164
页数:8
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