High Performance Self-Driven Photodetectors Based on MoS2 Schottky Barrier Diode

被引：16

作者：

Dai, Mengde ^{[1
]}

Wu, Qianqian ^{[1
]}

Wang, Chenglin ^{[1
]}

Liu, Xingyu ^{[1
]}

Zhang, Xiumei ^{[1
]}

Cai, Zhengyang ^{[1
]}

Lin, Liangliang ^{[2
]}

Gu, Xiaofeng ^{[1
]}

Ostrikov, Kostya ^{[3
,4
]}

Nan, Haiyan ^{[1
]}

Xiao, Shaoqing ^{[1
]}

机构：

[1] Jiangnan Univ, Engn Res Ctr IoT Technol Applicat, Dept Elect Engn, Minist Educ,Sch Sci, Wuxi 214122, Peoples R China

[2] Jiangnan Univ, Sch Chem & Mat Engn, Wuxi 214122, Peoples R China

[3] Queensland Univ Technol QUT, Sch Phys & Chem, Brisbane, Qld 4000, Australia

[4] Queensland Univ Technol QUT, QUT Ctr Mat Sci, Brisbane, Qld 4000, Australia

来源：

ADVANCED OPTICAL MATERIALS | 2024年 / 12卷 / 09期

关键词：

MoS2; Schottky diodes; self-driven photodetectors; soft plasma; MONOLAYER MOS2; WORK FUNCTION; GRAPHENE; CONTACTS;

D O I：

10.1002/adom.202301900

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Practical application of two-dimensional transition metal dichalcogenides (2D TMDCs) involves creating a p-n diode and a Schottky diode. Unlike p-n diodes, the research of 2D material-based Schottky diodes especially in the application field of photodetectors is lacking. Here, a Schottky diode is fabricated by depositing Pt and Ni on the MoS2 to form Schottky and ohmic contacts, respectively. The MoS2 Schottky diode exhibits a rectification ratio of 2.36 x 10(3) and an ideality factor of 1.12. The electrical characteristics of Ni-MoS2-Ni and Pt-MoS2-Pt field effect transistors are systematically compared. The Schottky barrier height is estimated to be 94.2 meV by using the thermionic emission theory. The Schottky diode device can exhibit excellent self-powered photodetection performance in the visible to near-infrared region (447-940 nm) due to the strong built-in electric field originating from the Schottky barrier at the MoS2/Pt interface. The maximum detectivity reaches 2.09 x 10(12) Jones with a response time of 52.6 ms under 940 nm laser illumination. Furthermore, the photodetection performance of such a Schottky diode can be further improved by NH3 plasma doping treatment. This work provides not only a simple approach to construct a 2D materials-based Schottky diode photodetector but also a post treatment technique to further improve the device performance.

引用

页数：10

共 47 条

[1] Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer [J].

Andrews, Kraig ;

Bowman, Arthur ;

Rijal, Upendra ;

Chen, Pai-Yen ;

Zhou, Zhixian .

ACS NANO, 2020, 14 (05) :6232-6241

[2] Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating [J].

Buscema, Michele ;

Groenendijk, Dirk J. ;

Steele, Gary A. ;

van der Zant, Herre S. J. ;

Castellanos-Gomez, Andres .

NATURE COMMUNICATIONS, 2014, 5

[3] Schottky barrier detectors on GaN for visible-blind ultraviolet detection [J].

Chen, Q ;

Yang, JW ;

Osinsky, A ;

Gangopadhyay, S ;

Lim, B ;

Anwar, MZ ;

Khan, MA ;

Kuksenkov, D ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2277-2279

[4]

Chen X., 2016, Angew. Chem, V128, P5897, DOI [DOI 10.1002/ANGE.201510219, 10.1002/ange.201510219]

[5] Lateral MoS2 p-n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics [J].

Choi, Min Sup ;

Qu, Deshun ;

Lee, Daeyeong ;

Liu, Xiaochi ;

Watanabe, Kenji ;

Taniguchi, Takashi ;

Yoo, Won Jong .

ACS NANO, 2014, 8 (09) :9332-9340

[6] Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode [J].

Deng, Yexin ;

Luo, Zhe ;

Conrad, Nathan J. ;

Liu, Han ;

Gong, Yongji ;

Najmaei, Sina ;

Ajayan, Pulickel M. ;

Lou, Jun ;

Xu, Xianfan ;

Ye, Peide D. .

ACS NANO, 2014, 8 (08) :8292-8299

[7] A strain tunable single-layer MoS2 photodetector [J].

Gant, Patricia ;

Huang, Peng ;

de Lara, David Perez ;

Guo, Dan ;

Frisenda, Riccardo ;

Castellanos-Gomez, Andres .

MATERIALS TODAY, 2019, 27 :8-13

[8] Visible to near-infrared photodetectors based on MoS2 vertical Schottky junctions [J].

Gong, Fan ;

Fang, Hehai ;

Wang, Peng ;

Su, Meng ;

Li, Qing ;

Ho, Johnny C. ;

Chen, Xiaoshuang ;

Lu, Wei ;

Liao, Lei ;

Wang, Jun ;

Hu, Weida .

NANOTECHNOLOGY, 2017, 28 (48)

[9] Atomically Thin Ohmic Edge Contacts Between Two-Dimensional Materials [J].

Guimaraes, Marcos H. D. ;

Gao, Hui ;

Han, Yimo ;

Kang, Kibum ;

Xie, Saien ;

Kim, Cheol-Joo ;

Muller, David A. ;

Ralph, Daniel C. ;

Park, Jiwoong .

ACS NANO, 2016, 10 (06) :6392-6399

[10] A High-Performance Schottky Photodiode with Asymmetric Metal Contacts Constructed on 2D Bi2O2Se [J].

Han, Jianfu ;

Fang, Chaocheng ;

Yu, Ming ;

Cao, Juexian ;

Huang, Kai .

ADVANCED ELECTRONIC MATERIALS, 2022, 8 (07)

← 1 2 3 4 5 →