Chemical conversion of MoS2 thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements

被引：0
|
作者：
Patouillard, J. [1 ,2 ,3 ]
Gassilloud, R. [2 ,3 ]
Mercier, F. [1 ]
Mantoux, A. [1 ]
Boichot, R. [1 ]
Crisci, A. [1 ]
Bernard, M. [2 ,3 ]
Gauthier, N. [2 ,3 ]
Cadot, S. [2 ,3 ]
Raynaud, C. [2 ,3 ]
Gianesello, F. [4 ]
Blanquet, E. [1 ]
机构：
[1] Univ Grenoble Alpes, CNRS, Grenoble INP, SIMaP, F-38000 Grenoble, France
[2] Univ Grenoble Alpes, CEA, LETI, Minatec Campus, FR-38000 Grenoble, France
[3] CEA, LETI, Minatec Campus, FR-38054 Grenoble 9, France
[4] STMicroelectronics, 850 rue Jean Monnet, F-38926 Crolles, France
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2023年 / 41卷 / 05期
关键词：
TRANSITION-METAL NITRIDES; SURFACE-PROPERTIES; DIFFUSION BARRIER; RAMAN; BULK; MONOLAYER; GROWTH; 1ST-PRINCIPLES; SPECTROSCOPY; NANOSHEETS;
D O I：
10.1116/6.0002678
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Two-dimensional (2D) metal nitrides are new emerging materials with potential applications in electronics, energy storage, or conversion efficiency. In this paper, we report the synthesis of molybdenum nitride by nitriding molybdenum disulfide (MoS2) via a 700 ? ammonia (NH3) reactive heat treatment. A well-controlled uniform MoS2 thin film was prepared by atomic layer deposition (ALD). The progressive MoS2 nitriding reaction has been demonstrated and monitored by in situ reflectance measurements. These results have been confirmed by Raman and x-ray photoelectron spectrometry. This method paves the way to a new potential route to the synthesis of Mo nitride obtained from a well-controlled uniform 2D-MoS2 thin film deposited by ALD.
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页数：9
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