Leakage mechanism in ferroelectric Hf0.5Zr0.5O2 epitaxial thin films

被引：12

作者：

Cheng, Xianlong ^{[1
]}

Zhou, Chao ^{[1
]}

Lin, Baichen ^{[1
]}

Yang, Zhenni ^{[2
]}

Chen, Shanquan ^{[1
]}

Zhang, Kelvin H. L. ^{[2
]}

Chen, Zuhuang ^{[1
,3
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China

[2] Xiamen Univ, Coll Chem & Chem Engn, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China

[3] Harbin Inst Technol, Flexible Printed Elect Technol Ctr, Shenzhen 518055, Peoples R China

来源：

APPLIED MATERIALS TODAY | 2023年 / 32卷

基金：

中国国家自然科学基金;

关键词：

Leakage mechanism; Ferroelectric; Epitaxial thin films; ENHANCED FERROELECTRICITY; SCHOTTKY CONTACTS; GROWTH;

D O I：

10.1016/j.apmt.2023.101804

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fluorite-structured Hf0.5Zr0.5O2 (HZO) thin films have attracted considerable attention in recent years because of their good CMOS-compatibility and robust ferroelectricity down to a thickness of few unit-cell. The main challenges remaining to be overcome before HZO films will be the ideal candidates for next-generation, non-volatile ferroelectric memory devices are lowering its leakage current and improving its fatigue endurance. However, the leakage mechanism of the ferroelectric HZO thin films still remains elusive, which hinders the applicability of HZO in microelectronic devices. Herein, we studied the electric properties of Pt/HZO/ La0.7Sr0.3MnO3 (LSMO) heterostructures grown on (001) SrTiO3 (STO) substrates. The leakage mechanism is found to be dominated by Schottky emission and the Schottky barrier heights are 0.48 eV and 0.58 eV for Pt/HZO and LSMO/HZO interfaces, respectively. In turn, by post-annealing in oxygen atmosphere, we are able to increase the barrier height by 0.1 eV and thus effectively reduce the leakage current and improve the endurance by an order of magnitude. Our studies help guide future work to integrate HZO thin films into microelectronic devices.

引用

页数：7

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