Electrical monitoring of organic crystal phase transition using MoS2 field effect transistor

被引:5
|
作者
Boulet, Ilan [1 ]
Pascal, Simon [1 ]
Bedu, Frederic [1 ]
Ozerov, Igor [1 ]
Ranguis, Alain [1 ]
Leoni, Thomas [1 ]
Becker, Conrad [1 ]
Masson, Laurence [1 ]
Matkovic, Aleksandar [2 ]
Teichert, Christian [2 ]
Siri, Olivier [1 ]
Attaccalite, Claudio [1 ]
Huntzinger, Jean-Roch [3 ]
Paillet, Matthieu [3 ]
Zahab, Ahmed [3 ]
Parret, Romain [1 ]
机构
[1] Aix Marseille Univ, CNRS, CINAM, UMR 7325, Campus Luminy, F-13288 Marseille, France
[2] Univ Leoben, Inst Phys, A-8700 Leoben, Austria
[3] Univ Montpellier, Lab Charles Coulomb, UMR 221, CNRS, Montpellier, France
来源
NANOSCALE ADVANCES | 2023年 / 5卷 / 06期
关键词
LAYER MOS2; LABEL-FREE; MOBILITY; BEHAVIOR;
D O I
10.1039/d2na00817c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Hybrid van der Waals heterostructures made of 2D materials and organic molecules exploit the high sensitivity of 2D materials to all interfacial modifications and the inherent versatility of the organic compounds. In this study, we are interested in the quinoidal zwitterion/MoS2 hybrid system in which organic crystals are grown by epitaxy on the MoS2 surface and reorganize in another polymorph after thermal annealing. By means of field-effect transistor measurements recorded in situ all along the process, atomic force microscopy and density functional theory calculations we demonstrate that the charge transfer between quinoidal zwitterions and MoS2 strongly depends on the conformation of the molecular film. Remarkably, both the field effect mobility and the current modulation depth of the transistors remain unchanged which opens up promising prospects for efficient devices based on this hybrid system. We also show that MoS2 transistors enable fast and accurate detection of structural modifications that occur during phases transitions of the organic layer. This work highlights that MoS2 transistors are remarkable tools for on-chip detection of molecular events occurring at the nanoscale, which paves the way for the investigation of other dynamical systems.
引用
收藏
页码:1681 / 1690
页数:10
相关论文
共 50 条
  • [31] Hybrid Characteristics of MoS2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor
    Park, Hyeon Jung
    Park, Cheol-Joon
    Kim, Jun Young
    Kim, Min Su
    Kim, Jeongyong
    Joo, Jinsoo
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (38) : 32556 - 32566
  • [32] Structures and Phase Transition of a MoS2 Monolayer
    Kan, M.
    Wang, J. Y.
    Li, X. W.
    Zhang, S. H.
    Li, Y. W.
    Kawazoe, Y.
    Sun, Q.
    Jena, P.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (03): : 1515 - 1522
  • [33] Low Frequency Noise in MoS2 Negative Capacitance Field-effect Transistor
    Alghamdi, Sami
    Si, Mengwei
    Yang, Lingming
    Ye, Peide D.
    2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2018,
  • [34] Electronic Properties of Multilayer MoS2 Field Effect Transistor with Unique Irradiation Resistance
    Zhang, Yifan
    Chen, Xiaofei
    Wang, Heshen
    Dai, Junfeng
    Xue, Jianming
    Guo, Xun
    JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 125 (03): : 2089 - 2096
  • [35] Phase Transition of MoS2 Bilayer Structures
    Pandey, Mohnish
    Bothra, Pallavi
    Pati, Swapan K.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 120 (07): : 3776 - 3780
  • [36] Analytical Investigation for MoS2 Field Effect Transistor-Based Gas Sensor
    Akbari, Elnaz
    Afroozeh, Abdolkarim
    Zeinalinezhad, Alireza
    Amiri, Iraj S.
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2018, 13 (03) : 399 - 404
  • [37] Ambipolar MoS2 Field-Effect Transistor by Spatially Controlled Chemical Doping
    Liu, Xiaochi
    Yuan, Yahua
    Qu, Deshun
    Sun, Jian
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2019, 13 (09):
  • [38] Study of oxygen plasma induced modulation of photoconductivity in MoS2 field effect transistor
    Khan, Muhammad Atif
    Rathi, Servin
    Yun, Sun Jin
    Kim, Gil-Ho
    SUPERLATTICES AND MICROSTRUCTURES, 2020, 142
  • [39] Understanding and Mapping Sensitivity in MOS2 Field-Effect-Transistor-Based Sensors
    Noyce, Steven G.
    Doherty, James L.
    Zauscher, Stefan
    Franklin, Aaron D.
    ACS NANO, 2020, 14 (09) : 11637 - 11647
  • [40] Fabrication and comparison of MoS2 and WSe2 field-effect transistor biosensors
    Nam, Hongsuk
    Oh, Bo-Ram
    Chen, Mikai
    Wi, Sungjin
    Li, Da
    Kurabayashi, Katsuo
    Liang, Xiaogan
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (06):