Influence of sputtering power on optical, electrical properties and structure of aluminum-doped indium saving indium-tin oxide thin films sputtered on preheated substrates

被引：4

作者：

Petrovska, S. ^{[1
]}

Sergiienko, R. ^{[2
]}

Ilkiv, B. ^{[1
]}

Nakamura, T. ^{[3
]}

Ohtsuka, M. ^{[3
]}

机构：

[1] Natl Acad Sci Ukraine, Frantsevich Inst Problems Mat Sci, Kiev, Ukraine

[2] Natl Acad Sci Ukraine, Phys Technol Inst Met & Alloys, Kiev, Ukraine

[3] Tohoku Univ, Inst Multidisciplinary Res Adv Mat IMRAM, Sendai, Miyagi, Japan

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2023年 / 751卷 / 01期

关键词：

Aluminum-doped indium tin oxide; direct current sputtering; electrical properties; optical properties; radio frequency sputtering; SOL-GEL; TRANSPARENT; SYSTEM;

D O I：

10.1080/15421406.2022.2073534

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The indium tin oxide (ITO) thin film doped with aluminum oxide with reduced to 50 mass% indium oxide content were fabricated by co-sputtering of the ITO and Al2O3 targets. Thin films were deposited in mixed argon-oxygen atmosphere onto glass substrates preheated at 523 K. The dependence of the electrical, optical and structural properties of the films on radio frequency (RF) power of the Al2O3 target was investigated. The obtained thin films were characterized by means of four-point probe, Ultraviolet-Visible-Infrared (UV-Vis-IR) spectroscopy, x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). Doping of the ITO thin films by Al2O3 resulted in increasing transmittance of films. It has been found that the film sputtered under optimum condition showed values of volume resistivity 713 mu omega cm, electron mobility 30.8 cm(2)V(-1)s(-1) and carrier density 2.87 x 10(20) cm(-3).

引用

页码：100 / 108

页数：9

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