Domain structures of PbTiO3 and Pb(Zr,Ti)O3 thin films controlled by tensile strain induced by a Sr(Zr,Ti)O3 buffer layer

被引：1
|
作者：
Morikawa, Tomohide [1 ]
Kodera, Masanori [2 ,6 ]
Shimizu, Takao [3 ]
Ishihama, Keisuke [1 ]
Ehara, Yoshitaka [4 ]
Sakata, Osami [5 ]
Funakubo, Hiroshi [1 ]
机构：
[1] Tokyo Inst Technol, Sch Mat & Chem Technol, Yokohama 2268502, Japan
[2] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Yokohama 2268502, Japan
[3] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, Tsukuba 3050044, Japan
[4] Natl Def Acad, Dept Commun Engn, Hashirimizu, Yokosuka 2398686, Japan
[5] Japan Synchrotron Radiat Res Inst JASRI, Ctr Synchrotron Radiat Res, 1-1-1 Kouto, Sayo, Hyogo 6795198, Japan
[6] Natl Inst Adv Ind Sci & Technol, Global Zero Emiss Res Ctr, Tsukuba West 16-1,Onogawa, Tsukuba, Ibaraki 3058569, Japan
来源：
APPLIED PHYSICS LETTERS | 2024年 / 124卷 / 03期
关键词：
MECHANISM;
D O I：
10.1063/5.0180449
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin films of Sr(Zr,Ti)O-3 were investigated as buffer layers to induce tensile strain in ferroelectric thin films such as PbTiO(3 )and Pb(Zr,Ti)O3 to control the domain structure. By tuning the composition of Sr(Zr,Ti)O-3, (100)-oriented PbTiO3 and Pb(Zr,Ti)O-3 films were obtained, revealing that tensile strain was introduced into the thin films by the lattice of the buffer layer. We propose a methodology for the successive control of tensile stress, which is useful for understanding and controlling the domain structures of ferroelectric films that result in the ferroelectric and piezoelectric properties of ferroelectric thin films.
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页数：5
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