The unique edge states of the zigzag beta-SiC7 nanoribbons aroused our attention, and therefore, based on first-principles calculations, we investigated their spin-dependent electronic transport properties by constructing controllable defects to modulate these special edge states. Interestingly, by introducing rectangular edge defects in the SiSi and SiC edge-terminated systems, not only the spin-unpolarized is successfully converted to completely spin-polarized, but also the direction of polarization can be switched, thus enabling a dual spin filter. The analyses further reveal that the two transmission channels with opposite spins are spatially separated and that the transmission eigenstates are highly concentrated at the relative edges. The specific edge defect introduced only suppresses the transmission channel at the same edge but reserves the transmission channel at the other edge. In addition, for the CSi and CC edge-terminated systems, an additional spin-down band exists due to spin splitting in the spin-up band at E-F, so that besides the original spatially separated two spin-opposite channels, an extra spin channel is distributed at the upper edge, resulting in unidirectional fully spin-polarized transport. The peculiar spatially separated edge states and excellent spin filtering properties could open up further possibilities for beta-SiC7-based electronic devices in spintronics applications.
机构:
Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China
Nanjing Forestry Univ, Coll Informat Sci & Technol, Nanjing 210037, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
Han, Ziqi
Hao, Hua
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Hangzhou Normal Univ, Sch Phys, Hangzhou 311121, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
Hao, Hua
Zheng, Xiaohong
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Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China
Nanjing Forestry Univ, Coll Informat Sci & Technol, Nanjing 210037, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
Zheng, Xiaohong
Zeng, Zhi
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
机构:
Qufu Normal Univ, Dept Phys, Qufu 273165, Shandong, Peoples R China
Univ Brasilia, Inst Fis, BR-70919970 Brasilia, DF, BrazilQufu Normal Univ, Dept Phys, Qufu 273165, Shandong, Peoples R China
Correa, J. H.
Dias, A. C.
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Univ Brasilia, Inst Fis, BR-70919970 Brasilia, DF, BrazilQufu Normal Univ, Dept Phys, Qufu 273165, Shandong, Peoples R China
Dias, A. C.
Villegas-Lelovsky, L.
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Univ Estadual Paulista, Dept Fis, IGCE, BR-13506900 Rio Claro, SP, Brazil
Univ Fed Sao Carlos, Ctr Ciencias Exatas & Tecnol, Dept Fis, BR-13565905 Sao Carlos, SP, BrazilQufu Normal Univ, Dept Phys, Qufu 273165, Shandong, Peoples R China
Villegas-Lelovsky, L.
Fu, Jiyong
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Qufu Normal Univ, Dept Phys, Qufu 273165, Shandong, Peoples R ChinaQufu Normal Univ, Dept Phys, Qufu 273165, Shandong, Peoples R China
Fu, Jiyong
Chico, Leonor
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CSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, SpainQufu Normal Univ, Dept Phys, Qufu 273165, Shandong, Peoples R China
Chico, Leonor
Qu, Fanyao
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Univ Brasilia, Inst Fis, BR-70919970 Brasilia, DF, BrazilQufu Normal Univ, Dept Phys, Qufu 273165, Shandong, Peoples R China