Performance optimization of In(Ga)As quantum dot intermediate band solar cells

被引：9
作者：
Yang, Guiqiang [1 ,2 ]
Liu, Wen [1 ,2 ]
Bao, Yidi [1 ,2 ]
Chen, Xiaoling [1 ,2 ]
Ji, Chunxue [1 ,2 ]
Wei, Bo [1 ,3 ]
Yang, Fuhua [1 ,2 ]
Wang, Xiaodong [1 ,2 ,3 ,4 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
[4] Beijing Engn Res Ctr Semicond Micronano Integrated, Beijing 100083, Peoples R China
来源：
DISCOVER NANO | 2023年 / 18卷 / 01期
基金：
国家重点研发计划;
关键词：
In(Ga)As quantum dot; Intermediate band solar cell; Strain; Thermal excitation; Carrier lifetime; OPTICAL-PROPERTIES; VOLTAGE RECOVERY; EFFICIENCY; LAYER; ABSORPTION; DEVICES; STRAIN;
D O I：
10.1186/s11671-023-03839-z
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can absorb photons with energy lower than the bandgap of the semiconductor through the half-filled intermediate band, extending the absorption spectrum of the cell. However, issues in the IBSC, such as the strain around multi-stacking QDs, low thermal excitation energy, and short carrier lifetime, lead to its low conversion efficiency. In recent years, many efforts have been made from different aspects. In this paper, we focus on In(Ga)As QD-IBSC, list the experimental technologies used to improve the performance of the cell and review the recent research progress. By analyzing the effects of different technologies on conversion efficiency, the development direction of the In(Ga)As QD-IBSC in the future is proposed.
引用
收藏
页数：14
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