A Novel Switching Strategy Based on the Driving Voltage and Switching Sequence for Si/SiC Hybrid Switch

被引：2
作者：
Xiao, Biao [1 ]
Guo, Qi [1 ]
Tu, Chunming [1 ]
Xiao, Fan [1 ]
Liu, Ping [1 ]
Long, Liu [1 ]
Blaabjerg, Frede [2 ]
机构：
[1] Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Peoples R China
[2] Aalborg Univ, DK-9100 Aalborg, Denmark
来源：
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2024年 / 71卷 / 11期
基金：
中国国家自然科学基金;
关键词：
Switches; Switching circuits; Insulated gate bipolar transistors; MOSFET; Silicon carbide; Switching loss; Reliability; Current interval; driving voltage; hybrid switch; switching sequence; switching strategy; GATE DRIVER; SIC MOSFET; CIRCUIT;
D O I：
10.1109/TIE.2024.3366201
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Silicon/Silicon carbide hybrid switch have been proven to have the advantages of high efficiency and low cost. However, existing research of hybrid switches only focuses on reducing device losses or ensuring reliable operation. In this article, a novel switching strategy based on the driving voltage and switching sequence for the hybrid switch is proposed. Experimental results show that compared with the existing switching strategy of the fixed driving voltage, the proposed switching strategy cannot only ensure a high reliability of the hybrid switch, but also improve the efficiency. Then, the effectiveness of the proposed switching strategy is verified in a single-phase inverter. Further, the efficiency of the single-phase inverter operating with the proposed switching strategy is increased by 0.79% compared with the existing switching strategy.
引用
收藏
页码：14265 / 14275
页数：11
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