High-Performance UV Photodetector via Energy Band Engineering and LSPR-Enhanced Pyro-Phototronic Effect in Au Decorated 2D-PbI2/1D-ZnO Heterojunction

被引:10
作者
Zheng, Xuemei [1 ,2 ]
Dong, Mengji [2 ,3 ]
Li, Qi [2 ,4 ]
Liu, Yanli [2 ,5 ]
Di, Xuan [2 ,5 ]
Lu, Xianmao [1 ,2 ]
Meng, Jianping [2 ,3 ]
Li, Zhou [1 ,2 ]
机构
[1] Guangxi Univ, Coll Chem & Chem Engn, Nanning 530004, Peoples R China
[2] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 101400, Peoples R China
[3] Univ Chinese Acad Sci, Sch Nanosci & Engn, Beijing 100049, Peoples R China
[4] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
[5] China Univ Geosci Beijing, Sch Engn & Technol, Beijing 100083, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
energy band engineering; LSPR; pyro-phototronic effect; self-powered; UV photodetectors; WSE2; PHOTOTRANSISTOR; RESPONSIVITY; SENSITIVITY; DETECTIVITY; PEROVSKITE;
D O I
10.1002/adom.202303177
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ultraviolet (UV) photodetectors have attracted extensive attention in various applications, including aerospace, optical communication, and fire warning. However, the intrinsic coupling of high responsivity and fast response as well as imperfect interface transmission impede the further improvement of UV photodetector. Here, a high-performance Au-decorated PbI2/ZnO pn junction UV photodetector with a one-dimensional (1D) and two-dimensional (2D) interspersed structure is presented. The pyro-phototronic effect and energy band engineering effect from the localized pn junction generated by the layered p-type PbI2 nanosheets along the c-axis of ZnO are coupled to modulate the separation and transport of photogenerated carriers. Furthermore, the localized surface plasmon resonance of Au nanoparticles produces transient thermal power to raise temperature fast to enhance pyroelectric current. The self-powered Au@PbI2/ZnO photodetector displays a high responsivity of 0.21 A W-1, excellent detectivity of 7.9 x 1012 Jones, and fast response/recovery time of 25/31 ms, under the illumination of 325 nm light with the power density of 0.08 mu W cm-2. This work offers an effective strategy for designing high-performance next-generation optoelectronic devices.
引用
收藏
页数:8
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