Unveiling the luminescence of α-Zn2SiO4 phosphor: Profound influence of sintering temperatures

被引:4
|
作者
Diana, P. [1 ]
Sebastian, S. [2 ]
Sivaganesh, D. [3 ]
Raj, C. S. A. [2 ]
Jacob, S. Santhosh Kumar [4 ]
AlAbdulaal, T. H. [5 ]
Shkir, Mohd [5 ]
机构
[1] Kalasalingam Acad Res & Educ, Dept Phys, Krishnan Koil, Tamil Nadu, India
[2] Arul Anandar Coll, PG & Res Dept Phys, Madurai 625514, India
[3] Ural Fed Univ, Mira str, Ekaterinburg, Russia
[4] Amer Coll, PG & Res Dept Phys, Madurai 625002, Tamil Nadu, India
[5] King Khalid Univ, Coll Sci, Dept Phys, Abha 61413, Saudi Arabia
关键词
alpha-Zn2SiO4; Structure; Thermo-luminescence; Photoluminescence Quantum yield; TRPL; DIELECTRIC-PROPERTIES; THERMOLUMINESCENCE PROPERTIES; OPTICAL-PROPERTIES; GEL; GREEN; NANOPARTICLES; SIZE; NANOCOMPOSITES; NANOPHOSPHORS; MORPHOLOGY;
D O I
10.1016/j.radphyschem.2023.111156
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The zinc silicate (alpha-Zn2SiO4) phosphor was synthesized via a conventional sol-gel method, employing different sintering temperatures within the range of 800 to 1300 degrees C. To investigate the physicochemical properties of the alpha-Zn2SiO4 materials, a comprehensive range of analytical and spectroscopic techniques were utilized. In thermoluminescence (TL) measurements, the alpha-Zn2SiO4 sample sintered at 1200 degrees C exhibited a significantly higher intensity of glow peaks at around 115 degrees C and 304 degrees C. These enhanced glow peaks can be attributed to the presence of deep traps within the synthesized materials, which are activated upon X-ray irradiation. Additionally, dose-response measurements demonstrated a linear relationship between the TL glow peak intensity and the increment of X-ray dose. Furthermore, the photoluminescence (PL) analysis revealed that the synthesized alpha-Zn2SiO4 material emitted light at two distinct wavelengths at 463 nm and 542 nm which attributed to the possible electron-hole recombination of luminescent centres within the material. Combining the TL and PL results, the synthesized alpha-Zn2SiO4 material shows promise as a suitable candidate for dosimetry and lighting applications.
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页数:12
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