Graphene Spin Valves for Spin Logic Devices

被引:37
作者
Ghising, Pramod [1 ]
Biswas, Chandan [1 ]
Lee, Young Hee [1 ,2 ]
机构
[1] Sungkyunkwan Univ SKKU, Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys, Suwon 16419, South Korea
[2] Sungkyunkwan Univ, Dept Energy Sci, Dept Phys, Suwon 16419, South Korea
关键词
2D heterostructures; 2D spintronics; graphene non-local spin valves; graphene spin logic; spin current; HIGH-QUALITY GRAPHENE; GIANT MAGNETORESISTANCE; ELECTRICAL DETECTION; ROOM-TEMPERATURE; HIGH-PERFORMANCE; LOW-POWER; INJECTION; TRANSPORT; SEMICONDUCTORS; SPINTRONICS;
D O I
10.1002/adma.202209137
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An alternative to charge-based electronics identifies the spin degree of freedom for information communication and processing. The long spin-diffusion length in graphene at room temperature demonstrates its ability for highly scalable spintronics. The development of the graphene spin valve (SV) has inspired spin devices in graphene including spin field-effect transistors and spin majority logic gates. A comprehensive picture of spin transport in graphene SVs is required for further development of spin logic. This review examines the advances in graphene SVs and their role in the development of spin logic devices. Different transport and scattering mechanisms in charge and spin are discussed. Furthermore, the on/off switching energy between graphene SVs and charge-based FETs is compared to highlight their prospects for low-power devices. The challenges and perspectives that need to be addressed for the future development of spin logic devices are then outlined.
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页数:13
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