On the possible nature of deep centers in Ga2O3

被引：15

作者：

Polyakov, A. Y. ^{[1
]}

Kochkova, A. I. ^{[1
]}

Langorgen, Amanda ^{[2
]}

Vines, Lasse ^{[2
]}

Vasilev, A. ^{[1
]}

Shchemerov, I. V. ^{[1
]}

Romanov, A. A. ^{[1
]}

Pearton, S. J. ^{[3
]}

机构：

[1] Univ Sci & Technol MISiS, Dept Semicond Elect & Semicond Phys, 4 Leninsky Ave, Moscow 119049, Russia

[2] Univ Oslo, Ctr Mat Sci & Nanotechnol, Dept Phys, POB 1048, N-0316 Oslo, Norway

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2023年 / 41卷 / 02期

关键词：

EMISSION;

D O I：

10.1116/6.0002307

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electric field dependence of emission rate of the deep traps with level near E-c-0.6 eV, so-called E1 traps, was studied by means of deep level transient spectroscopy measurements over a wide range of applied voltages. The traps were initially introduced by 900 degrees C ampoule annealing in molecular hydrogen. The results indicate the activation energy of the centers and the ratio of high-field to low-field electron emission rates at a fixed temperature scale as the square root of electric field, suggesting that the centers behave as deep donors. The possible microscopic nature of the centers in view of recent theoretical calculations is discussed. The most likely candidates for the E1 centers are Si-Ga1-H or Sn-Ga2-H complexes.

引用

页数：6

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