Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy

被引：1

作者：

Baranov, A. I. ^{[1
,2
]}

Uvarov, A. V. ^{[1
,2
]}

Maksimova, A. A. ^{[1
,2
]}

Vyacheslavova, E. A. ^{[1
,2
]}

Kalyuzhnyy, N. A. ^{[3
]}

Mintairov, S. A. ^{[3
]}

Salii, R. A. ^{[3
]}

Yakovlev, G. E. ^{[2
]}

Zubkov, V. I. ^{[2
]}

Gudovskikh, A. S. ^{[1
,2
]}

机构：

[1] St Petersburg Natl Res Acad Univ, Russian Acad Sci, Alferov Fed State Budgetary Inst Higher Educ & Sci, Khlopin Str 8-3-A, St Petersburg 194021, Russia

[2] St Petersburg State Electrotech Univ LETI, St Petersburg, Russia

[3] Ioffe Inst, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2023年 / 49卷 / SUPPL 3期

关键词：

quantum well; capacitance-voltage profiling; electrochemical profiling;

D O I：

10.1134/S1063785023900649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, electron accumulation were detected in InP layer so existence of quantum well is confirmed. Results of admittance spectroscopy and deep-level transient spectroscopy showed defect formation in GaP layers above InP with energy position of Ec-0.21, 0.30 and 0.93 eV.

引用

页码：S163 / S167

页数：5

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