Changes in the Structure and Properties of Silicon Carbide under Gamma Irradiation

被引:1
|
作者
Gaibnazarov, B. B. [1 ]
Imanova, Gunel [2 ,3 ]
Khozhiev, Sh. T. [4 ]
Kosimov, I. O. [4 ]
Khudaikulov, I. Kh. [5 ]
Kuchkanov, Sh. K. [5 ]
Khallokov, F. K. [6 ]
Bekpulatov, I. R. [1 ]
机构
[1] Tashkent State Tech Univ, Tashkent, Uzbekistan
[2] Minist Sci & Educ Republ Azerbaijan, Inst Radiat Problems, Baku, Azerbaijan
[3] UNEC Res Ctr Sustainable Dev & Green Econ, Baku, Azerbaijan
[4] Inst Bioorgan Chem, Tashkent, Uzbekistan
[5] Inst Ion Plasma & Laser Technol, Tashkent, Uzbekistan
[6] Acad Sci Uzbek, Inst Nucl Phys, Tashkent, Uzbekistan
关键词
SiC samples; IR spectroscopy; Raman spectroscopy; X-ray phase analysis; gamma irradiation;
D O I
10.1080/10584587.2023.2239097
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The paper presents the results of comprehensive study of SiC samples, which is one of the most promising materials in the field of semiconductor nanotechnology. The identification and qualitative analysis of a SiC sample was carried out by Raman spectroscopy using an In Via Raman spectrometer. Based on the spectrogram of X-ray phase analysis, the amorphous and crystalline phases of this substance were determined. At the same time, according to the peaks of the spectrogram, based on the Miller indices and inter planar distances dhkl, complex compounds are shown that are newly formed on the basis of silicon carbide. Using the method of IR spectroscopy, the IR spectra of SiC were obtained in the optical range nu = 400-4000 cm-1.
引用
收藏
页码:208 / 215
页数:8
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