A Fully Digital SRAM-Based Four-Layer In-Memory Computing Unit Achieving Multiplication Operations and Results Store

被引:8
作者
Lin, Zhiting [1 ,2 ]
Zhang, Shaoying [3 ]
Jin, Qian [3 ]
Xia, Jianping [3 ]
Liu, Yunwei [3 ]
Yu, Kefeng [3 ]
Zheng, Jian [3 ]
Xu, Xiaoming [3 ]
Fan, Xing [3 ]
Li, Ke [3 ]
Tong, Zhongzhen [4 ]
Wu, Xiulong [1 ,2 ]
Lu, Wenjuan [3 ]
Peng, Chunyu [3 ]
Zhao, Qiang [3 ]
机构
[1] Anhui Univ AHU, Sch Integrated Circuits, Hefei 230601, Peoples R China
[2] Anhui Prov High Performance Integrated Circuit Eng, Hefei 230601, Peoples R China
[3] Anhui Univ AHU, Sch Integrated Circuits, Hefei 230601, Peoples R China
[4] Beihang Univ, Sch Integrated Circuit Sci & Engn, Beijing 100191, Peoples R China
基金
中国国家自然科学基金;
关键词
Computer architecture; Adders; Discharges (electric); Threshold voltage; SRAM cells; In-memory computing; Arithmetic; In-memory computing (IMC); multiplication operation; Index Terms; static random access memory (SRAM); von Neumann bottleneck; write-back operation; MACRO; PRECISION; ARCHITECTURE; COMPUTATION; WEIGHT; TIME;
D O I
10.1109/TVLSI.2023.3266651
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The separation of memory and arithmetic logic unit (ALU) in the von Neumann computing architecture hinders the development of big data and high-performance computing. In-memory computing (IMC) as a new computation method significantly reduces the latency and power consumption of data processing. In this study, we propose a fully digital static random access memory (SRAM)-based IMC architecture, which has the following advantages: 1) it simplifies multiplication to multicycle addition operations, reuses logic cells, and reduces hardware overhead; 2) by adding a pair of nMOS transistors to achieve internal write-back, the computational efficiency is improved, and at the same time, the final result of the multiplication can be stored locally, eliminating the need to read the computational result immediately; and 3) this scheme can be easily expanded to multiplication operations with different bit widths, which provides good scalability. A 4-kb SRAM-IMC macro chip is manufactured using the SMIC 55-nm technology to realize 4-bit multiplication, with an energy efficiency of 51.4 TOPS/W (0.9 V) and a throughput of 234.3 GOPS/mm(2) . The proposed multiplication-accumulation architecture is applied to a neural network, which achieves 98.7% accuracy with the Mixed National Institute of Standards and Technology database (MNIST) dataset.
引用
收藏
页码:776 / 788
页数:13
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