Performance improvement of CZTS-based hybrid solar cell with double hole transport layer using extensive simulation

被引：14

作者：

Bhattarai, Sagar ^{[1
]}

Hossain, M. Khalid ^{[2
]}

Madan, Jaya ^{[3
]}

Pandey, Rahul ^{[3
]}

Samajdar, D. P. ^{[4
]}

Kalita, P. K. ^{[5
]}

Rashed, Ahmed Nabih Zaki ^{[6
,7
]}

Ansari, Mohd Zahid ^{[8
]}

Amami, Mongi ^{[9
]}

机构：

[1] Indian Inst Technol Guwahati, Technol Innovat & Dev Fdn, Gauhati 781039, Assam, India

[2] Bangladesh Atom Energy Commiss, Inst Elect Atom Energy Res Estab, Dhaka 1349, Bangladesh

[3] Chitkara Univ, Inst Engn & Technol, VLSI Ctr Excellence, Rajpura 140401, Punjab, India

[4] Indian Inst Informat Technol Design & Mfg, Dept ECE, Jbalapur 482005, Madhya Pradesh, India

[5] Rajiv Gandhi Univ, Dept Phys, Itanagar 791112, Arunachal Prade, India

[6] Menoufia Univ, Dept Elect & Elect Commun Engn, Menoufia 32951, Egypt

[7] Saveetha Sch Engn, Inst Elect & Commun Engn, Chennai 602105, India

[8] Yeungnam Univ, Sch Mat Sci & Engn, Gyongsan 38541, Gyeongbuk, South Korea

[9] King Khalid Univ, Coll Sci, Dept Chem, POB 9004, Abha, Saudi Arabia

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2023年 / 183卷

关键词：

AL; Absorber layer; HSC; Hybrid solar cell; CZTS; DD; Defect density; NUMERICAL-SIMULATION; EFFICIENCY; FILMS; OPTIMIZATION; CONVERSION; DESIGN; CO2;

D O I：

10.1016/j.jpcs.2023.111641

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The extensive outcomes of the specific modeling method for hybrid photovoltaic solar cells at the illumination condition of AM 1.5G spectrum are shown in this simulation work. This research aims to optimize the efficiency of the device structures by introducing the novel hybrid-absorber layer (AL). The hybrid solar cell (HSC) has higher efficiency with an absorber layer (AL), i.e., Copper Zinc Tin Sulphide. The current simulation uses ZnO, V2O5, and Spiro-OMeTAD as the carrier transport layers (CTLs); both hole/electron transport layer (HTL/ETL) to sandwich the CZTS, which have precise bandgaps of 1.5 eV. Using double HTLs of Spiro-OMeTAD/V2O5 offers a high efficiency of 23.21%. The detailed examination of thickness, total defect density (DD), temperature dependency, and impedance-capacitance analysis of the simulated device structures are also studied simultaneously.

引用

页数：9

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