Surface passivation of CsPbBr3 films by interface engineering in efficient and stable self-powered perovskite photodetector

被引:15
|
作者
Zhao, Yue [1 ]
Jiao, Shujie [1 ]
Liu, Shuo [1 ]
Jin, Yimin [1 ]
Yang, Song [1 ]
Wang, Xianghu [2 ]
Liu, Tong [3 ]
Jin, Hongyan [4 ]
Wang, Dongbo [1 ]
Gao, Shiyong [1 ]
Wang, Jinzhong [1 ]
机构
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
[2] Shanghai Dianji Univ, Coll Mat, Shanghai 201306, Peoples R China
[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nano Bion SINANO, Vacuum Interconnected Nanotech Workstat Nano X, Suzhou 215123, Peoples R China
[4] Suzhou Inst Prod Qual Supervis & Inspection, Suzhou 215128, Peoples R China
基金
中国国家自然科学基金;
关键词
All-inorganic perovskite; Self-powered photodetector; Interface engineering; Defects passivation; SOLAR-CELLS; HIGH-PERFORMANCE;
D O I
10.1016/j.jallcom.2023.171434
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
All-inorganic metal halide perovskite is considered as one of the most promising perovskite materials for pho-todetectors, because of its remarkable optoelectronic characteristics and stability. Whereas, it remains challenge to achieve both excellent photodetection performance and stability due to the multitudes of defects in perovskite films. Herein, an interface engineering based on surface passivation strategy to achieve high-quality CsPbBr3 perovskite films by introducing thioacetamide (C2H5NS, abbreviated as TAA) as interface materials is reported. The interaction between TAA and perovskite passivates the uncoordinated Pb2+ on the surface of CsPbBr3 film, suppress carrier non-recombination and accelerates carriers transfer. The self-powered photodetector based on the passivated CsPbBr3 film prefers the maximum responsivity of 0.26 A W-1 and detectivity of 8.39 x 1012 Jones under 520 nm irradiation. In addition, the optimized photodetector exhibits excellent stability and maintains more than 98% of its initial photocurrent when operating over 8 h. This work demonstrates an alternative approach for the preparation of improved performance in CsPbBr3 perovskite photodetectors and associated photoelectric devices.
引用
收藏
页数:8
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