A Ternary Neural Network Computing-in-Memory Processor With 16T1C Bitcell Architecture

被引:5
|
作者
Jeong, Hoichang [1 ]
Kim, Seungbin [2 ]
Park, Keonhee [2 ]
Jung, Jueun [1 ]
Lee, Kyuho Jason [3 ]
机构
[1] Ulsan Natl Inst Sci & Technol, Dept Elect Engn, Ulsan 44919, South Korea
[2] Ulsan Natl Inst Sci & Technol, Grad Sch Artificial Intelligence, Ulsan 44919, South Korea
[3] Ulsan Natl Inst Sci & Technol, Grad Sch Artificial Intelligence, Dept Elect Engn, Ulsan 44919, South Korea
基金
新加坡国家研究基金会;
关键词
Computer architecture; Throughput; Neural networks; Linearity; Energy efficiency; Common Information Model (computing); Transistors; SRAM; computing-in-memory (CIM); processing-in-memory (PIM); ternary neural network (TNN); analog computing; SRAM MACRO; COMPUTATION; BINARY;
D O I
10.1109/TCSII.2023.3265064
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A highly energy-efficient Computing-in-Memory (CIM) processor for Ternary Neural Network (TNN) acceleration is proposed in this brief. Previous CIM processors for multi-bit precision neural networks showed low energy efficiency and throughput. Lightweight binary neural networks were accelerated with CIM processors for high energy efficiency but showed poor inference accuracy. In addition, most previous works suffered from poor linearity of analog computing and energy-consuming analog-to-digital conversion. To resolve the issues, we propose a Ternary-CIM (T-CIM) processor with 16T1C ternary bitcell for good linearity with the compact area and a charge-based partial sum adder circuit to remove analog-to-digital conversion that consumes a large portion of the system energy. Furthermore, flexible data mapping enables execution of the whole convolution layers with smaller bitcell memory capacity. Designed with 65 nm CMOS technology, the proposed T-CIM achieves 1,316 GOPS of peak performance and 823 TOPS/W of energy efficiency.
引用
收藏
页码:1739 / 1743
页数:5
相关论文
共 31 条
  • [21] LOG-CIM: An Energy-Efficient Logarithmic Quantization Computing-In-Memory Processor With Exponential Parallel Data Mapping and Zero-Aware 6T Dual-WL Cell
    Um, Soyeon
    Kim, Sangjin
    Hong, Seongyon
    Kim, Sangyeob
    Yoo, Hoi-Jun
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2024, 59 (10) : 3330 - 3341
  • [22] Ternary Output Binary Neural Network With Zero-Skipping for MRAM-Based Digital In-Memory Computing
    Na, Taehui
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2023, 70 (07) : 2655 - 2659
  • [23] An Energy Efficient Computing-in-Memory Accelerator With 1T2R Cell and Fully Analog Processing for Edge AI Applications
    Zhou, Keji
    Zhao, Chenyang
    Fang, Jinbei
    Jiang, Jingwen
    Chen, Deyang
    Huang, Yujie
    Jing, Minge
    Han, Jun
    Tian, Haidong
    Xiong, Xiankui
    Liu, Qi
    Xue, Xiaoyong
    Zeng, Xiaoyang
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2021, 68 (08) : 2932 - 2936
  • [24] An 82-nW 0.53-pJ/SOP Clock-Free Spiking Neural Network With 40-s Latency for AIoT Wake-Up Functions Using a Multilevel-Event-Driven Bionic Architecture and Computing-in-Memory Technique
    Liu, Ying
    Ma, Yufei
    He, Wei
    Wang, Zhixuan
    Shen, Linxiao
    Ru, Jiayoon
    Huang, Ru
    Ye, Le
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2023, 70 (08) : 3075 - 3088
  • [25] A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM
    Song, Jiahao
    Tang, Xiyuan
    Luo, Haoyang
    Zhang, Haoyi
    Qiao, Xin
    Sun, Zixuan
    Yang, Xiangxing
    Wu, Zihan
    Wang, Yuan
    Wang, Runsheng
    Huang, Ru
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2024, 59 (03) : 842 - 854
  • [26] Fully Integrated 3-D Stackable CNTFET/RRAM 1T1R Array as BEOL Buffer Macro for Monolithic 3-D Integration With Analog RRAM-Based Computing-in-Memory
    Zhang, Yibei
    Li, Yijun
    Tang, Jianshi
    Gao, Lei
    Gao, Ningfei
    Xu, Haitao
    An, Ran
    Qin, Qi
    Liu, Zhengwu
    Wu, Dong
    Gao, Bin
    Qian, He
    Wu, Huaqiang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (05) : 3343 - 3350
  • [27] A 2941-TOPS/W Charge-Domain 10T SRAM Compute-in-Memory for Ternary Neural Network
    Cheon, Sungsoo
    Lee, Kyeongho
    Park, Jongsun
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2023, 70 (05) : 2085 - 2097
  • [28] TAC-RAM: A 65nm 4Kb SRAM Computing-in-Memory Design with 57.55 TOPS/W supporting Multibit Matrix-Vector Multiplication for Binarized Neural Network
    Wang, Xiaomeng
    Liu, Xuejiao
    Hu, Xianghong
    Zhong, Xiaopeng
    Chen, Xizi
    Liu, Yu
    Kong, Patrick
    Tian, Fengshi
    Tsui, Chiying
    2022 IEEE INTERNATIONAL CONFERENCE ON ARTIFICIAL INTELLIGENCE CIRCUITS AND SYSTEMS (AICAS 2022): INTELLIGENT TECHNOLOGY IN THE POST-PANDEMIC ERA, 2022, : 66 - 69
  • [29] A 55nm 1-to-8 bit Configurable 6T SRAM based Computing-in-Memory Unit-Macro for CNN-based AI Edge Processors
    Zhang, Zhixiao
    Chen, Jia-Jing
    Si, Xin
    Tu, Yung-Ning
    Su, Jian-Wei
    Huang, Wei-Hsing
    Wang, Jing-Hong
    Wei, Wei-Chen
    Chiu, Yen-Cheng
    Hong, Je-Min
    Sheu, Shyh-Shyuan
    Li, Sih-Han
    Liu, Ren-Shuo
    Hsieh, Chih-Cheng
    Tang, Kea-Tiong
    Chang, Meng-Fan
    2019 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), 2019, : 217 - 218
  • [30] A Process and Data Variations Tolerant Capacitive Coupled 10T1C SRAM for In-Memory Compute (IMC) in Deep Neural Network Accelerators
    Iqbal, Belal
    Grover, Anuj
    Rawat, Harsh
    2022 IEEE INTERNATIONAL CONFERENCE ON ARTIFICIAL INTELLIGENCE CIRCUITS AND SYSTEMS (AICAS 2022): INTELLIGENT TECHNOLOGY IN THE POST-PANDEMIC ERA, 2022, : 459 - 462