Deep Insights of SiGe PNPN Tunnel FET Cavity Based Biosensors for Label Free Detection

被引：2

作者：

Vastrad, Sakshi ^{[1
]}

Rajakumari, V ^{[1
]}

Pradhan, K. P. ^{[1
]}

机构：

[1] Indian Inst Informat Technol Design & Mfg IIITDM, Chennai 600127, Tamil Nadu, India

来源：

SILICON | 2023年 / 15卷 / 04期

关键词：

Band-to-band tunneling (BTBT) probability; Biosensor; Sensitivity; Dielectric modulation; DIELECTRIC MODULATED FET; FIELD-EFFECT TRANSISTOR; GATE; INVERSION; CHANNEL; DRAIN; TFET;

D O I：

10.1007/s12633-022-02085-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper reports a benchmark study on tunnel FET (TFET) biosensors by considering the effect of analyte conjugation in the nanogap cavity. A comparative investigation is carried out for the PNPN TFET biosensor with different source materials (i) Si (E-G = 1.1 eV) (ii) Si0.5Ge0.5 (E-G = 0.78 eV). A wide range of electrical characteristics are analyzed to predict the high sensitivity for both material cases. Further, the uniform variation of the biomolecule length (L-bio) along the nanogap cavity with neutral and charged analytes is investigated. Again, the impact of non-uniform filled profiles of the biomolecules such as step profile, concave, and convex in the cavity are systematically reported. Finally, the sensitivity as a parameter to measure the shifting of electrical characteristics for the biosensors is reported in a comparative manner.

引用

页码：1821 / 1834

页数：14

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