Design of a 17-24-GHz High-Efficiency Power Amplifier for Satellite Communications

被引：2
|
作者：
Yi, Chupeng [1 ]
Lu, Yang [1 ]
Zhao, Ziyue [1 ]
Zhang, Hengshuang [2 ]
Zhao, Bochao [2 ]
Li, Peixian [1 ]
Ma, Xiaohua [1 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Minist Educ, Key Lab Wide Bandgap Semicond Mat, Xian 710071, Peoples R China
[2] China Acad Space Technol Xian, Xian 710110, Peoples R China
来源：
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 02期
基金：
中国博士后科学基金;
关键词：
Fundamental impedance; GaAs monolithic microwave integrated circuit (MMIC); high-efficiency; modified resistive-reactive hybrid continuous mode (Res-Rea. HCM);
D O I：
10.1109/LMWC.2022.3206269
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a K-band high-efficiency power amplifier (PA) design using modified resistive-reactive hybrid continuous modes (HCMs) is presented. These modified modes can increase the real part of the fundamental impedance when the second harmonic impedances become resistive-reactive. This helps to reduce the impedance transformation ratio when applying modified modes in transistors with a small optimal impedance (R-opt), as well as making HCMs more practical in these transistors. For K-band Satcom downlink applications, by using this method, combined with a compact output matching network (OMN) design, high performance, and high integration PA can be achieved. A 2 x 1.2 mm GaAs pHEMT PA operating at 17-24 GHz was designed and fabricated to verify the theory. Continuous wave measurements show that the saturation output power is greater than 0.5 W and an average power-added efficiency (PAE) of 42%.
引用
收藏
页码：188 / 191
页数：4
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