Operando dynamics of trapped carriers in perovskite solar cells observed via infrared optical activation spectroscopy

被引：22

作者：

Pan, Jiaxin ^{[1
]}

Chen, Ziming ^{[1
]}

Zhang, Tiankai ^{[2
]}

Hu, Beier ^{[1
]}

Ning, Haoqing ^{[1
]}

Meng, Zhu ^{[1
]}

Su, Ziyu ^{[1
]}

Nodari, Davide ^{[1
]}

Xu, Weidong ^{[1
]}

Min, Ganghong ^{[1
]}

Chen, Mengyun ^{[2
]}

Liu, Xianjie ^{[3
]}

Gasparini, Nicola ^{[1
]}

Haque, Saif A. ^{[1
]}

Barnes, Piers R. F. ^{[4
]}

Gao, Feng ^{[2
]}

Bakulin, Artem A. ^{[1
]}

机构：

[1] Imperial Coll London, Ctr Processible Elect, Dept Chem, London W12, England

[2] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden

[3] Linkoping Univ, ITN, Lab Organ Elect, SE-60174 Norrkoping, Sweden

[4] Imperial Coll London, Dept Phys, London SW7 2AZ, England

来源：

NATURE COMMUNICATIONS | 2023年 / 14卷 / 01期

基金：

英国科研创新办公室;

关键词：

FILL FACTOR; STATES; RECOMBINATION; PASSIVATION; PERFORMANCE; EFFICIENT; LAYERS;

D O I：

10.1038/s41467-023-43852-5

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Conventional spectroscopies are not sufficiently selective to comprehensively understand the behaviour of trapped carriers in perovskite solar cells, particularly under their working conditions. Here we use infrared optical activation spectroscopy (i.e., pump-push-photocurrent), to observe the properties and real-time dynamics of trapped carriers within operando perovskite solar cells. We compare behaviour differences of trapped holes in pristine and surface-passivated FA(0.99)Cs(0.01)PbI(3) devices using a combination of quasi-steady-state and nanosecond time-resolved pump-push-photocurrent, as well as kinetic and drift-diffusion models. We find a two-step trap-filling process: the rapid filling (similar to 10 ns) of low-density traps in the bulk of perovskite, followed by the slower filling (similar to 100 ns) of high-density traps at the perovskite/hole transport material interface. Surface passivation by n-octylammonium iodide dramatically reduces the number of trap states (similar to 50 times), improving the device performance substantially. Moreover, the activation energy (similar to 280 meV) of the dominant hole traps remains similar with and without surface passivation.

引用

页数：10