Zwitterion Reduces Open-Circuit Voltage Loss in Wide-Bandgap Perovskite Solar Cells with 22% Efficiency and Its Application in Tandem Devices

被引:2
作者
Han, Xiaojing [1 ,2 ,3 ,4 ,5 ]
Wang, Jin [1 ,2 ,3 ,4 ,5 ]
Jin, Lu [1 ,2 ,3 ,4 ,5 ]
Wang, Pengyang [1 ,2 ,3 ,4 ,5 ]
Shi, Biao [1 ,2 ,3 ,4 ,5 ]
Zhao, Ying [1 ,2 ,3 ,4 ,5 ]
Zhang, Xiaodan [1 ,2 ,3 ,4 ,5 ]
机构
[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Renewable Energy Convers & Storage Ctr, Solar Energy Convers Ctr, Tianjin 300350, Peoples R China
[2] Haihe Lab Sustainable Chem Transformat, Tianjin 300192, Peoples R China
[3] Thin Film Devices & Technol Tianjin, Key Lab Photoelect, Tianjin 300350, Peoples R China
[4] Minist Educ, Engn Res Ctr Thin Film Photoelect Technol, Tianjin 300350, Peoples R China
[5] Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
defects; nonradiative recombinations; open-circuit voltage losses; perovskite/silicon tandem solar cells; zwitterions; DEFECT PASSIVATION; INTERFACE; PERFORMANCE;
D O I
10.1002/solr.202300648
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Wide-bandgap (WBG) perovskite solar cells (PSCs) can be combined with other narrow-bandgap cells to form tandem solar cells (TSCs), which have excellent commercialization prospects. However, the component of WBG perovskite is complex, and the crystallization process is difficult to control. Various bulk and surface defects in polycrystalline films lead to severe nonradiative recombination of photo generated carriers, resulting in severe open-circuit voltage (V-OC) loss in WBG PSCs. Herein, a zwitterionic additive is introduced to alleviate the V-OC deficit. The sulfinyl group (-S(sic)O) in formamidine sulfinic acid (FSA) has a robust interaction with Pb2+, which retards the crystallization and improves the crystal quality in perovskite films. Furthermore, FSA has negatively charged centers (-SO2-) and positively charged centers (-C(NH2)(2)(+)), which can passivate the halogen and cation vacancies, respectively. The improved crystalline quality and passivated defects reduce the capture of carriers by defects and facilitate higher V-OC. With this strategy, the 1.68 eV bandgap PSCs achieve a champion efficiency of 22.06% and a high V-OC of 1.25 V (V-OC loss = 0.43 V). Moreover, the 2-terminal perovskite/silicon TSCs are fabricated with an extraordinary power conversion efficiency of 28.81%.
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页数:9
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