Elaboration of Silicon Nanostructures with Vapor-Phase Silver Assisted Chemical Etching: Correlation between Structural and Optical Properties

被引：0

作者：

Amri, Chohdi ^{[1
,2
]}

Liu, Shengzhong ^{[3
,4
]}

Najar, Adel ^{[1
]}

机构：

[1] United Arab Emirates Univ, Coll Sci, Dept Phys, Al Ain, U Arab Emirates

[2] Ctr Rech & Technol Energie, Lab Photovolta, Technopole Borj Cedria, BP 95, Hammam Lif 2050, Tunisia

[3] Chinese Acad Sci, Dalian Inst Chem Phys, iChEM, Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China

[4] Shaanxi Normal Univ, Sch Mat Sci & Engn, Key Lab Appl Surface & Colloid Chem, Minist Educ,Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China

来源：

NANOMATERIALS | 2023年 / 13卷 / 10期

关键词：

vapor phase-silver assisted chemical etching; porous silicon; photoluminescence; quantum confinement effect; oxide layer; POROUS SILICON; PHOTOLUMINESCENCE; EMISSION;

D O I：

10.3390/nano13101602

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and multi-peak photoluminescence (PL) emissions. The lateral and vertical etching rates (LER and VER) were discussed based on the etching mechanism of the VP-Ag-ACE. The antireflective suitability of the vapor-etched layer has been evaluated by a reflectivity measurement and exhibits reflectivity values lower than 3%. The PL emission at both room and low temperatures emissions were deeply discussed and correlated with the structural properties of the Si morphologies and their surface states based on the FTIR results.

引用

页数：11

共 29 条

[21] Metal-Assisted Chemical Etching Using Tollen’s Reagent to Deposit Silver Nanoparticle Catalysts for Fabrication of Quasi-ordered Silicon Micro/Nanostructures [J].

Xuewen Geng ;

Meicheng Li ;

Liancheng Zhao ;

Paul W. Bohn .

Journal of Electronic Materials, 2011, 40 :2480-2485

[22] Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor deposition [J].

Chen, X. Y. ;

Lu, Y. F. ;

Wu, Y. H. ;

Cho, B. J. ;

Tang, L. J. ;

Lu, D. ;

Dong, J. R. .

APPLIED SURFACE SCIENCE, 2006, 253 (05) :2718-2726

[23] Silicon rich silicon oxide films deposited by radio frequency plasma enhanced chemical vapor deposition method: Optical and structural properties [J].

Mukhopadhyay, Sumita ;

Ray, Swati .

APPLIED SURFACE SCIENCE, 2011, 257 (23) :9717-9723

[24] Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition [J].

Jung, Mina ;

Chang, Jiho ;

Lee, Hyunjae ;

Ha, Jun-seok ;

Park, Jin-sub ;

Park, Seungwhan ;

Fujii, Katsushi ;

Yao, Takafumi ;

Kil, Gyung-suk ;

Lee, Seogwoo ;

Cho, Myungwhan ;

Whang, Sungmin ;

Seo, Yong-gon .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03) :623-626

[25] Correlation between photoluminescence in the gas phase and growth kinetics during laser induced chemical vapor deposition of silicon nitride thin films [J].

Tamir, S ;

Berger, S ;

Shakour, N ;

Speiser, S .

APPLIED SURFACE SCIENCE, 2002, 186 (1-4) :251-255

[26] Influence of H2O2 concentration on the structural and photoluminescent properties of porous silicon nanowires fabricated by metal-assisted chemical etching [J].

Gonchar, Kirill A. ;

Moiseev, Daniil, V ;

Bozhev, Ivan, V ;

Osminkina, Liubov A. .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 125

[27] Direct comparison on the structural and optical properties of metal-catalytic and self-catalytic assisted gallium nitride (GaN) nanowires by chemical vapor deposition [J].

Purushothaman, V. ;

Venkatesh, P. Sundara ;

Navamathavan, R. ;

Jeganathan, K. .

RSC ADVANCES, 2014, 4 (85) :45100-45108

[28] Effect of annealing in oxidizing atmosphere on optical and structural properties of silicon suboxide thin films obtained by gas-jet electron beam plasma chemical vapor deposition method [J].

Zamchiy, A. O. ;

Baranov, E. A. ;

Merkulova, I. E. ;

Volodin, V. A. ;

Sharafutdinov, M. R. ;

Khmel, S. Ya. .

VACUUM, 2018, 152 :319-326

[29] Effects of substrate temperature on structural, optical and morphological properties of hydrogenated nanocrystalline silicon thin films prepared by inductively coupled plasma chemical vapor deposition [J].

Dingyu Yang ;

Xinghua Zhu ;

Hui Sun ;

Xiuying Gao ;

Xu Li .

Journal of Materials Science: Materials in Electronics, 2015, 26 :7790-7796

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