A Bridge-Level Junction Temperature Estimation Method for SiC MOSFETs Combining Transient Voltage and Current Peaks

被引：0

作者：

Wu, Shuo ^{[1
]}

Sun, Pengju ^{[1
]}

Huang, Xu ^{[1
]}

Li, Kaiwei ^{[1
]}

机构：

[1] Chongqing Univ, State Key Lab Power Transmiss Equipment & Syst Sec, Chongqing 400044, Peoples R China

来源：

ENERGIES | 2023年 / 16卷 / 10期

关键词：

junction temperature; SiC MOSFET; temperature-sensitive electrical parameter; SENSITIVE ELECTRICAL PARAMETERS; POWER MOSFETS; IR CAMERA; MODEL;

D O I：

10.3390/en16104105

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Accurate measurement of the junction temperature T-j is crucial for ensuring safe operation and evaluating the performance of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). In this paper, the junction temperature of a half-bridge is monitored by combining transient voltage and current peaks across the lower device. Both theoretical analysis and switch tests validate that the peak induced voltage and peak reversed current during the commutation transient exhibit a linear relationship with the temperature of the corresponding devices. The impact of load current and bus voltage on the measurement results is also investigated. Moreover, the effectiveness of the proposed method is confirmed by carrying out tests at different temperatures, and the feasibility of online implementation is discussed. The experimental results show that the proposed method has high linearity and sensitivity and can simultaneously provide temperature information for both devices of a half-bridge.

引用

页数：12