Noise properties in the Coulomb blockade region of FinFETs

被引：0
作者：
Tanamoto, Tetsufumi [1 ]
Ono, Keiji [2 ]
Deguchi, Jun [3 ]
Wadatsumi, Junji [3 ]
Fujimoto, Ryuichi [3 ]
机构：
[1] Teikyo Univ, Dept Informat & Elect Engn, 1-1 Toyosatodai, UtSunomiya, Tochigi 3208551, Japan
[2] RIKEN, Adv Device Lab, Wako, Saitama 3510198, Japan
[3] Kioxia Corp, 2-5-1 Kasama,Sakae Ku, Yokohama, Kanagawa 2478585, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 03期
关键词：
Coulomb blockade; silicon qubit; quantum dot; FinFET; noise; trap; single electron; LOW-FREQUENCY NOISE; GATE; THRESHOLD; MODEL;
D O I：
10.35848/1347-4065/ad2823
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fin FETs (FinFETs) are a promising candidate for the platform of Si quantum computers. The noise properties of commercial FinFETs were experimentally investigated at temperatures below 10 K. The drain current showed Coulomb oscillation, indicating that the FinFET channel became a single quantum dot. Moreover, the noise in the drain current was analyzed, and the basic properties of commercial FinFETs in the low-temperature region were discussed.
引用
收藏
页数：6
相关论文
共 32 条
  • [1] Extraction of Si-SiO2 interface trap densities in MOS structures with ultrathin oxides
    Bauza, D
    [J]. IEEE ELECTRON DEVICE LETTERS, 2002, 23 (11) : 658 - 660
  • [2] Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs
    Beckers, Arnout
    Jazaeri, Farzan
    Grill, Alexander
    Narasimhamoorthy, Subramanian
    Parvais, Bertrand
    Enz, Christian
    [J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 : 780 - 788
  • [3] Spin Qubits in Silicon FinFET Devices
    Fuhrer, A.
    Aldeghi, M.
    Berger, T.
    Camenzind, L. C.
    Eggli, R. S.
    Geyer, S.
    Harvey-Collard, P.
    Hendrickx, N. W.
    Kelly, E. G.
    Massai, L.
    Mergenthaler, M.
    Muller, P.
    Kuhlmann, A. V.
    Patlatiuk, T.
    Paredes, S.
    Schupp, F. J.
    Salis, G.
    Sommer, L.
    Tsoukalas, K.
    Trivino, N. Vico
    Warburton, R. J.
    Zumbuhl, D. M.
    [J]. 2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM, 2022,
  • [4] An Exchange-Coupled Donor Molecule in Silicon
    Gonzalez-Zalba, M. F.
    Saraiva, Andre
    Calderon, Maria J.
    Heiss, Dominik
    Koiller, Belita
    Ferguson, Andrew J.
    [J]. NANO LETTERS, 2014, 14 (10) : 5672 - 5676
  • [5] Toward a formal theory for computing machines made out of whatever physics offers
    Jaeger, Herbert
    Noheda, Beatriz
    van der Wiel, Wilfred G. G.
    [J]. NATURE COMMUNICATIONS, 2023, 14 (01)
  • [6] Jiezhi Chen, 2015, 2015 Symposium on VLSI Technology, pT40, DOI 10.1109/VLSIT.2015.7223695
  • [7] Influence of substrate impurity concentration on sub-threshold swing of Si n-channel MOSFETs at cryogenic temperatures down to 4 K
    Kang, Min-Soo
    Sumita, Kei
    Oka, Hiroshi
    Mori, Takahiro
    Toprasertpong, Kasidit
    Takenaka, Mitsuru
    Takagi, Shinichi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SC)
  • [8] Mitigating Impact of Defects On Performance with Classical Device Engineering of Scaled Si/SiGe Qubit Arrays
    Kotlyar, R.
    Premaratne, S.
    Zheng, G.
    Corrigan, J.
    Pillarisetty, R.
    Neyens, S.
    Zietz, O.
    Watson, T.
    Luthi, F.
    Borjans, F.
    Lampert, L.
    Henry, E.
    George, H.
    Bojarski, S.
    Roberts, J.
    Matsuura, A. Y.
    Clarke, J. S.
    [J]. 2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM, 2022,
  • [9] Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
    Lansbergen, G. P.
    Rahman, R.
    Wellard, C. J.
    Woo, I.
    Caro, J.
    Collaert, N.
    Biesemans, S.
    Klimeck, G.
    Hollenberg, L. C. L.
    Rogge, S.
    [J]. NATURE PHYSICS, 2008, 4 (08) : 656 - 661
  • [10] Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body
    Lim, Y. F.
    Xiong, Y. Z.
    Singh, N.
    Yang, R.
    Jiang, Y.
    Loh, W. Y.
    Bera, L. K.
    Lo, G. Q.
    Kwong, D. -L.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2006, 27 (09) : 765 - 768
1234