GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion

被引：5

作者：

Liu, Xuan ^{[1
]}

Wang, Maojun ^{[2
,3
]}

Wei, Jin ^{[2
,3
]}

Wen, Cheng P. ^{[2
,3
]}

Xie, Bing ^{[2
,3
]}

Hao, Yilong ^{[2
,3
]}

Yang, Xuelin ^{[1
]}

Shen, Bo ^{[1
]}

机构：

[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China

[3] Beijing Adv Innovat Ctr Integrated Circuits, Beijing 100871, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 04期

关键词：

Annealing; Hydrogen; Plasmas; Gallium nitride; Anodes; Junctions; Schottky diodes; Breakdown voltage (BV); diffusion; gallium nitride (GaN); GaN-on-Si; hydrogen; junction termination extension (JTE); p-n diodes; HIGH-VOLTAGE; FABRICATION; SCHOTTKY; DEVICES; DESIGN; DRIFT;

D O I：

10.1109/TED.2023.3247366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Utilizing hydrogen plasma treatment and con-trolled diffusion, a junction termination extension (JTE) structure for vertical gallium nitride (GaN) p-n diode with gradient hole density (GHD) is spontaneously formed based on the selective area partial passivation of Mg acceptors with hydrogen. The reverse bias for the quasi-vertical GaN-on-Si p-n diodes to reach a leakage current of 1 A/cm(2) was boosted from 631 to 1100 V. In addition, the fabricated diode possessed a superior rectifying behavior with an ON/OFF-current ratio of 10(12), a specific differential ON-resistance of 0.75 m omega middot cm(2).

引用

页码：1636 / 1640

页数：5