GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion

被引：5
作者：
Liu, Xuan [1 ]
Wang, Maojun [2 ,3 ]
Wei, Jin [2 ,3 ]
Wen, Cheng P. [2 ,3 ]
Xie, Bing [2 ,3 ]
Hao, Yilong [2 ,3 ]
Yang, Xuelin [1 ]
Shen, Bo [1 ]
机构：
[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China
[3] Beijing Adv Innovat Ctr Integrated Circuits, Beijing 100871, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 04期
关键词：
Annealing; Hydrogen; Plasmas; Gallium nitride; Anodes; Junctions; Schottky diodes; Breakdown voltage (BV); diffusion; gallium nitride (GaN); GaN-on-Si; hydrogen; junction termination extension (JTE); p-n diodes; HIGH-VOLTAGE; FABRICATION; SCHOTTKY; DEVICES; DESIGN; DRIFT;
D O I：
10.1109/TED.2023.3247366
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Utilizing hydrogen plasma treatment and con-trolled diffusion, a junction termination extension (JTE) structure for vertical gallium nitride (GaN) p-n diode with gradient hole density (GHD) is spontaneously formed based on the selective area partial passivation of Mg acceptors with hydrogen. The reverse bias for the quasi-vertical GaN-on-Si p-n diodes to reach a leakage current of 1 A/cm(2) was boosted from 631 to 1100 V. In addition, the fabricated diode possessed a superior rectifying behavior with an ON/OFF-current ratio of 10(12), a specific differential ON-resistance of 0.75 m omega middot cm(2).
引用
收藏
页码：1636 / 1640
页数：5
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