Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz

被引：4

作者：

Liu, Si-Yu ^{[1
]}

Zhu, Jie-Jie ^{[1
]}

Guo, Jing-Shu ^{[1
]}

Cheng, Kai ^{[2
]}

Mi, Min-Han ^{[1
]}

Qin, Ling-Jie ^{[1
]}

Zhang, Bo-Wen ^{[1
]}

Tang, Min ^{[3
]}

Ma, Xiao-Hua ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Bandgap Semicond Technol, Xian 710071, Peoples R China

[2] Enkris Semicond Inc, Suzhou 215123, Peoples R China

[3] Shanghai Jiao Tong Univ, State Key Discipline Lab Radio Frequency Heterogen, Shanghai 200240, Peoples R China

来源：

CHINESE PHYSICS B | 2023年 / 32卷 / 11期

基金：

中国国家自然科学基金;

关键词：

GaN; low damage; enhancement mode; power-added efficiency; INALN/GAN HEMTS; ALGAN/GAN; PLASMA; PERFORMANCE;

D O I：

10.1088/1674-1056/acd8a5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper reports a low-damage interface treatment process for AlN/GaN high electron mobility transistor (HEMT) and demonstrates the excellent power characteristics of radio-frequency (RF) enhancementmode (E-mode) AlN/GaN HEMT. An RF E-mode device with 2.9-nm-thick AlN barrier layer fabricated by remote plasma oxidation (RPO) treatment at 300 degrees C. The device with a gate length of 0.12-mu m has a threshold voltage (V-th) of 0.5 V, a maximum saturation current of 1.16 A/mm, a high I-on/I-off ratio of 1 x 10(8), and a 440-mS/mm peak transconductance. During continuous wave (CW) power testing, the device demonstrates that at 3.6 GHz, a power added efficiency is 61.9% and a power density is 1.38 W/mm, and at 30 GHz, a power added efficiency is 41.6% and a power density is 0.85 W/mm. Furthermore, the RPO treatment improves the mobility of RF E-mode AlN/GaN HEMT. All results show that the RPO processing method has good applicability to scaling ultrathin barrier E-mode AlN/GaN HEMT for 5G compliable frequency ranging from sub-6 GHz to Ka-band.

引用

页数：5

共 26 条

[1] Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation [J].

Anderson, Travis J. ;

Koehler, Andrew D. ;

Greenlee, Jordan D. ;

Weaver, Bradley D. ;

Mastro, Michael A. ;

Hite, Jennifer K. ;

Eddy, Charles R., Jr. ;

Kub, Francis J. ;

Hobart, Karl D. .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (08) :826-828

[2] Normally-on/off AlN/GaN high electron mobility transistors [J].

Chang, C. Y. ;

Lo, C. F. ;

Ren, F. ;

Pearton, S. J. ;

Kravchenko, I. I. ;

Dabiran, A. M. ;

Cui, B. ;

Chow, P. P. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10) :2415-2418

[3] Development of enhancement mode AlN/GaN high electron mobility transistors [J].

Chang, C. Y. ;

Pearton, S. J. ;

Lo, C. F. ;

Ren, F. ;

Kravchenko, I. I. ;

Dabiran, A. M. ;

Wowchak, A. M. ;

Cui, B. ;

Chow, P. P. .

APPLIED PHYSICS LETTERS, 2009, 94 (26)

[4] Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs [J].

Chung, Jinwook W. ;

Roberts, John C. ;

Piner, Edwin L. ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (11) :1196-1198

[5] Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm gm and 112-GHz fT [J].

Corrion, A. L. ;

Shinohara, K. ;

Regan, D. ;

Milosavljevic, I. ;

Hashimoto, P. ;

Willadsen, P. J. ;

Schmitz, A. ;

Wheeler, D. C. ;

Butler, C. M. ;

Brown, D. ;

Burnham, S. D. ;

Micovic, M. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (10) :1116-1118

[6] Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High fmax [J].

Denninghoff, Daniel J. ;

Dasgupta, Sansaptak ;

Lu, Jing ;

Keller, Stacia ;

Mishra, Umesh K. .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (06) :785-787

[7] 18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation [J].

Feng, Z. H. ;

Zhou, R. ;

Xie, S. Y. ;

Yin, J. Y. ;

Fang, J. X. ;

Liu, B. ;

Zhou, W. ;

Chen, Kevin J. ;

Cai, S. J. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) :1386-1388

[8] E-PHENIT, single supply, power amplifier for Ku band applications [J].

Fujii, K ;

Morkner, H .

2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, :859-862

[9] Aspect Ratio Impact on RF and DC Performance of State-of-the-Art Short-Channel GaN and InGaAs HEMTs [J].

Guerra, Diego ;

Akis, Richard ;

Marino, Fabio A. ;

Ferry, David K. ;

Goodnick, Stephen M. ;

Saraniti, Marco .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) :1217-1219

[10] High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique [J].

Huang, Sen ;

Liu, Xinyu ;

Zhang, Jinhan ;

Wei, Ke ;

Liu, Guoguo ;

Wang, Xinhua ;

Zheng, Yingkui ;

Liu, Honggang ;

Jin, Zhi ;

Zhao, Chao ;

Liu, Cheng ;

Liu, Shenghou ;

Yang, Shu ;

Zhang, Jincheng ;

Hao, Yue ;

Chen, Kevin J. .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (08) :754-756

← 1 2 3 →