A ferroelectric memristor has attracted much attention due to convenient controlling by polarization switching, but the resistive switching has been attributed to the drift or charge trapping of defects. To distinguish the resistive switching mechanism between ferroelectric polarization switching and the normal resistive switching mechanism such as the drift or charge trapping of defects, BaTiO3 (BTO) thin films were grown on a (001) Nb:SrTiO3 single crystal substrate by pulsed laser deposition with high and low laser energy density. Based on a piezoelectric force microscope, ferroelectricity is found in BTO thin films grown at high laser energy density. X-ray photoelectron spectroscopy further confirms the existence of defects in the BTO films grown at low laser energy density. The high energy sample with low density of defects exhibits a resistance hysteresis loop but little current hysteresis loop, while the low energy sample with high density of defects shows a significant resistance and current hysteresis loop simultaneously. These results provide a deep understanding about the resistive switching from ferroelectric polarization switching and the drift or charge trapping of defects.
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Pan, Xinqiang
Shuai, Yao
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Shuai, Yao
Wu, Chuangui
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Wu, Chuangui
Luo, Wenbo
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Univ Elect Sci & Technol China, Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Luo, Wenbo
Sun, Xiangyu
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Sun, Xiangyu
Zeng, Huizhong
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Zeng, Huizhong
Zhou, Shengqiang
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Bautzner Landstr 400, D-01328 Dresden, GermanyUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Zhou, Shengqiang
Boettger, Roman
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Bautzner Landstr 400, D-01328 Dresden, GermanyUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
Boettger, Roman
Ou, Xin
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaUniv Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
机构:
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
Cao, Xun
Li, Xiaomin
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Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
Li, Xiaomin
Gao, Xiangdong
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Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
Gao, Xiangdong
Liu, Xinjun
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Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
Liu, Xinjun
Yang, Chang
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Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
Yang, Chang
Chen, Lidong
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Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
机构:
Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
Shuai, Yao
Zhou, Shengqiang
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
Peking Univ, Sch Phys, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R ChinaHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
Zhou, Shengqiang
Buerger, Danilo
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
Buerger, Danilo
Reuther, Helfried
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
Reuther, Helfried
Skorupa, Ilona
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
Skorupa, Ilona
John, Varun
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
John, Varun
Helm, Manfred
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
Helm, Manfred
Schmidt, Heidemarie
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Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany