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Control of resistive switching type in BaTiO3 thin films grown by high and low laser fluence
被引:3
作者:
Li, Ang
[1
]
Li, Qinxuan
[1
]
Jia, Caihong
[1
]
Zhang, Weifeng
[1
,2
]
机构:
[1] Henan Univ, Sch Future Technol, Henan Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China
[2] Henan Acad Sci, Inst Quantum Mat & Phys, Zhengzhou 450046, Peoples R China
基金:
中国国家自然科学基金;
关键词:
TUNNEL-JUNCTIONS;
ELECTRORESISTANCE;
RESISTANCE;
BEHAVIOR;
SINGLE;
STATE;
D O I:
10.1063/5.0142736
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
A ferroelectric memristor has attracted much attention due to convenient controlling by polarization switching, but the resistive switching has been attributed to the drift or charge trapping of defects. To distinguish the resistive switching mechanism between ferroelectric polarization switching and the normal resistive switching mechanism such as the drift or charge trapping of defects, BaTiO3 (BTO) thin films were grown on a (001) Nb:SrTiO3 single crystal substrate by pulsed laser deposition with high and low laser energy density. Based on a piezoelectric force microscope, ferroelectricity is found in BTO thin films grown at high laser energy density. X-ray photoelectron spectroscopy further confirms the existence of defects in the BTO films grown at low laser energy density. The high energy sample with low density of defects exhibits a resistance hysteresis loop but little current hysteresis loop, while the low energy sample with high density of defects shows a significant resistance and current hysteresis loop simultaneously. These results provide a deep understanding about the resistive switching from ferroelectric polarization switching and the drift or charge trapping of defects.
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页数:8
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