Control of resistive switching type in BaTiO3 thin films grown by high and low laser fluence

被引:3
作者
Li, Ang [1 ]
Li, Qinxuan [1 ]
Jia, Caihong [1 ]
Zhang, Weifeng [1 ,2 ]
机构
[1] Henan Univ, Sch Future Technol, Henan Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China
[2] Henan Acad Sci, Inst Quantum Mat & Phys, Zhengzhou 450046, Peoples R China
基金
中国国家自然科学基金;
关键词
TUNNEL-JUNCTIONS; ELECTRORESISTANCE; RESISTANCE; BEHAVIOR; SINGLE; STATE;
D O I
10.1063/5.0142736
中图分类号
O59 [应用物理学];
学科分类号
摘要
A ferroelectric memristor has attracted much attention due to convenient controlling by polarization switching, but the resistive switching has been attributed to the drift or charge trapping of defects. To distinguish the resistive switching mechanism between ferroelectric polarization switching and the normal resistive switching mechanism such as the drift or charge trapping of defects, BaTiO3 (BTO) thin films were grown on a (001) Nb:SrTiO3 single crystal substrate by pulsed laser deposition with high and low laser energy density. Based on a piezoelectric force microscope, ferroelectricity is found in BTO thin films grown at high laser energy density. X-ray photoelectron spectroscopy further confirms the existence of defects in the BTO films grown at low laser energy density. The high energy sample with low density of defects exhibits a resistance hysteresis loop but little current hysteresis loop, while the low energy sample with high density of defects shows a significant resistance and current hysteresis loop simultaneously. These results provide a deep understanding about the resistive switching from ferroelectric polarization switching and the drift or charge trapping of defects.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] Light enhanced resistive switching in BaTiO3/CoFeB/BaTiO3 structure
    Li, Hongwei
    Sun, Bai
    Wei, Lujun
    Wu, Jianhong
    Jia, Xiangjiang
    Zhao, Wenxi
    Chen, Peng
    FUNCTIONAL MATERIALS LETTERS, 2016, 9 (05)
  • [2] Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
    Qian, Mengdi
    Fina, Ignasi
    Sanchez, Florencio
    Fontcuberta, Josep
    ADVANCED ELECTRONIC MATERIALS, 2019, 5 (01)
  • [3] BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
    Roman, A.
    Rengifo, M.
    Saleh Medina, L. M.
    Reinoso, M.
    Negri, R. M.
    Steren, L. B.
    Rubi, D.
    THIN SOLID FILMS, 2017, 628 : 208 - 213
  • [4] Imprint phenomenon of ferroelectric switching characteristics in BaTiO3/PbTiO3 multilayer thin films
    Ahn, Yoonho
    Son, Jong Yeog
    JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 891
  • [5] Mechanisms of current conduction in Pt/BaTiO3/Pt resistive switching cell
    Pan, R. K.
    Zhang, T. J.
    Wang, J. Y.
    Wang, J. Z.
    Wang, D. F.
    Duan, M. G.
    THIN SOLID FILMS, 2012, 520 (11) : 4016 - 4020
  • [6] Resistive Switching and Redox Process at the BaTiO3/(La,Sr)MnO3 Multiferroic-Type Interface
    Jedrecy, Nathalie
    Jagtap, Vishal
    Hebert, Christian
    Becerra, Loic
    Hrabovsky, David
    Barbier, Antoine
    Portier, Xavier
    ADVANCED ELECTRONIC MATERIALS, 2021, 7 (01)
  • [7] Reversible transition of filamentary and ferroelectric resistive switching in BaTiO3/SmNiO3 heterostructures
    Liu, Yan-Dong
    Hu, Chuan-Zhu
    Wang, Jin-Jin
    Zhong, Ni
    Xiang, Ping-Hua
    Duan, Chun-Gang
    JOURNAL OF MATERIALS CHEMISTRY C, 2020, 8 (17) : 5815 - 5820
  • [8] Growth and self-assembly of BaTiO3 nanocubes for resistive switching memory cells
    Chu, Dewei
    Lin, Xi
    Younis, Adnan
    Li, Chang Ming
    Dang, Feng
    Li, Sean
    JOURNAL OF SOLID STATE CHEMISTRY, 2014, 214 : 38 - 41
  • [9] Ferroelectric memristive effect in BaTiO3 epitaxial thin films
    Chen, X.
    Jia, C. H.
    Chen, Y. H.
    Yang, G.
    Zhang, W. F.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (36)
  • [10] Domain Switching in BaTiO3 Films Induced by an Ultralow Mechanical Force
    Wang, Jie
    Fang, Hong
    Nie, Fang
    Chen, Yanan
    Tian, Gang
    Shi, Chaoqun
    He, Bin
    Lu, Weiming
    Zheng, Limei
    ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (43) : 48917 - 48925