Modeling of Stacking Faults in 4H-SiC n-Type Epilayer for TCAD Simulation

被引：6

作者：

Asada, Satoshi ^{[1
]}

Murata, Koichi ^{[1
]}

Tsuchida, Hidekazu ^{[1
]}

机构：

[1] Cent Res Inst Elect Power Ind CRIEPI, Yokosuka, Kanagawa 2400196, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 04期

关键词：

Electric potential; Silicon carbide; Computational modeling; Predictive models; Mathematical models; Current density; Semiconductor device modeling; Bipolar degradation; power device; quantum well (QW); silicon carbide (SiC); stacking faults (SFs); VOLTAGE; DEVICES;

D O I：

10.1109/TED.2023.3246023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current-voltage characteristics of an n-type 4H-silicon carbide (SiC) epilayer containing a stacking fault (SF) were analyzed using a technology computer-aided design (TCAD) simulation. In the simulation, the SF was modeled by a quantum well (QW) formed in the conduction band, which traps electrons and induces a potential barrier. The simulation analysis clarified that the electron conductance in the n-type epilayer containing a SF was dominantly determined by the potential barrier height. Based on this insight and the experimental results obtained from our previous study, the energetic depth and width of the QW in the conduction band were deduced for four types of SFs. The temperature dependence of the experimental current-voltage characteristics of Schottky barrier diodes (SBDs), containing the SF, was effectively reproduced by adopting the deduced QW depth and width, proving the feasibility of the proposed simulation model quantitatively predicting the impacts of SFs on SiC unipolar device performances.

引用

页码：1757 / 1762

页数：6

共 33 条

[11] Status and prospects for SiC power MOSFETs
Cooper, JA
Melloch, MR
Singh, R
Agarwal, A
Palmour, JW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (04) : 658 - 664
[12] Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method
Hoshino, Norihiro
Kamata, Isaho
Kanda, Takahiro
Tokuda, Yuichiro
Kuno, Hironari
Tsuchida, Hidekazu
[J]. APPLIED PHYSICS EXPRESS, 2020, 13 (09)
[13] Iannaccone G, 2004, SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2004, P275
[14] Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination
Itoh, A
Kimoto, T
Matsunami, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1996, 17 (03) : 139 - 141
[15] Cubic polytype inclusions in 4H-SiC
Iwata, H
Lindefelt, U
Öberg, S
Briddon, PR
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) : 1577 - 1585
[16] Photoluminescence of Frank-type defects on the basal plane in 4H-SiC epilayers
Kamata, Isaho
Zhang, Xuan
Tsuchida, Hidekazu
[J]. APPLIED PHYSICS LETTERS, 2010, 97 (17)
[17] Kawabata Naoyuki, 2016, Materials Science Forum, V858, P384, DOI 10.4028/www.scientific.net/MSF.858.384
[18] Current status and perspectives of ultrahigh-voltage SiC power devices
Kimoto, T.
Yonezawa, Y.
[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 78 : 43 - 56
[19] Lendenmann H, 2002, MATER SCI FORUM, V433-4, P901, DOI 10.4028/www.scientific.net/MSF.433-436.901
[20] Floating Electron States in Covalent Semiconductors
Matsushita, Yu-ichiro
Furuya, Shinnosuke
Oshiyama, Atsushi
[J]. PHYSICAL REVIEW LETTERS, 2012, 108 (24)

← 1 2 3 4 →