Interface design of transparent thermoelectric epitaxial ZnO/SnO2 multilayer film for simultaneous realization of low thermal conductivity and high optical transmittance

被引:7
|
作者
Ishibe, Takafumi [1 ]
Komatsubara, Yuki [1 ]
Katayama, Toranosuke [1 ]
Yamashita, Yuichiro [2 ]
Naruse, Nobuyasu [3 ]
Mera, Yutaka [3 ]
Hattori, Azusa N. [4 ]
Tanaka, Hidekazu [4 ]
Nakamura, Yoshiaki [1 ]
机构
[1] Osaka Univ, Grad Sch Engn Sci, 1-3 Machikaneyama Cho, Toyonaka, Osaka 5608531, Japan
[2] Natl Inst Adv Ind Sci & Technol, 1-1-1 Umezono, Tsukuba, Ibaraki 3058563, Japan
[3] Shiga Univ Med Sci, Dept Fundamental Biosci, Otsu, Shiga 5202192, Japan
[4] Osaka Univ, SANKEN Inst Sci & Ind Res, 8-1 Mihogaoka, Osaka, Ibaraki 5670047, Japan
关键词
THIN-FILMS; PERFORMANCE; ENHANCEMENT; SILICON;
D O I
10.1063/5.0124814
中图分类号
O59 [应用物理学];
学科分类号
摘要
A transparent thermoelectric material requires not only high thermoelectric performance but also high optical transmittance. However, in transparent nanostructured thermoelectric materials, the nanostructure interface brings the trade-off relationship between thermal conductivity and optical transmittance. We propose an approach for the simultaneous control of thermal conductivity and optical transmittance in the epitaxial nanostructured films, where carriers can be smoothly transported. This is realized by the interface design based on the three strategies: (1) a large atomic mass difference at the heterointerface for low thermal conductivity; (2) heterointerface with almost the same refractive index and flat surface for high optical transmittance; and (3) epitaxial heterointerface for smooth carrier transport. We formed epitaxial ZnO/SnO2 multilayer films based on this design guideline. The multilayer films exhibit lower thermal conductivity and higher optical transmittance than an ever reported transparent nanostructured thermoelectric material. These results highlight that this design is promising to realize high-performance transparent nanostructured thermoelectric materials.
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页数:6
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